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Veena Misra
Researcher at North Carolina State University
Publications - 251
Citations - 5283
Veena Misra is an academic researcher from North Carolina State University. The author has contributed to research in topics: Gate dielectric & Dielectric. The author has an hindex of 39, co-authored 249 publications receiving 4954 citations. Previous affiliations of Veena Misra include University of North Carolina at Chapel Hill & Motorola.
Papers
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Journal ArticleDOI
Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films
P. Morfouli,Gerard Ghibaudo,Thierry Ouisse,Eric M. Vogel,W.L. Hill,Veena Misra,P.K. McLarty,Jim J. Wortman +7 more
TL;DR: In this article, a comparison of the electrical properties between thermal and silicon oxynitride films is presented, showing that a higher Coulomb scattering rate due to the nitridation induced interface charge explains reasonably well the degradation of the low field mobility after Nitridation.
Journal ArticleDOI
Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs
TL;DR: In this article, the properties of oxynitride gate dielectrics formed using a low-pressure, rapid thermal chemical vapor deposition (RTCVD) process with SiH/sub 4/, NH/sub 3/, and N/sub 2/O as the reactive gases are presented.
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Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
TL;DR: In this paper, the role of the ALD growth temperature on the reaction between surface oxides and precursor was studied, and the reduction in native oxides on GaAs surface during atomic layer deposition (ALD) of HfO2 using tetrakis-dimethylamino-hafnium precursor was investigated using x-ray photoelectron spectroscopy.
Patent
Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates and devices formed thereby
TL;DR: In this article, an anodized metal oxide (AAO) thin film is used as an etching mask to transfer the first array of nano-channels to the underlying substrate insulating layer, which may be thinner than the etching template.
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Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics
TL;DR: In this paper, the role of oxygen in these dielectrics was studied by comparing equivalent oxide thickness (EOT) changes as a function of annealing temperature for capacitors with ZrO2 and Zr-silicate dielectric.