V
Veena Misra
Researcher at North Carolina State University
Publications - 251
Citations - 5283
Veena Misra is an academic researcher from North Carolina State University. The author has contributed to research in topics: Gate dielectric & Dielectric. The author has an hindex of 39, co-authored 249 publications receiving 4954 citations. Previous affiliations of Veena Misra include University of North Carolina at Chapel Hill & Motorola.
Papers
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Journal ArticleDOI
ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications
TL;DR: In this article, the authors compare different ALD dielectrics with identical electrical thickness on AlGaN/GaN, thereby ensuring identical electrostatic conditions across different dielectric.
Journal ArticleDOI
A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS
Kingsuk Maitra,Veena Misra +1 more
TL;DR: In this article, the performance of 25 nm metallurgical channel length bulk MOSFETs with mid-gap work function metal gates has been compared with conventional polysilicon gates and bandedge workfunction metal gates.
Journal ArticleDOI
Thin oxynitride film metal‐oxide‐semiconductor transistors prepared by low‐pressure rapid thermal chemical vapor deposition
TL;DR: In this article, thin silicon oxynitride (SiO•N) films have been deposited using low pressure rapid thermal chemical vapor deposition (RTCVD) with silane (SiH4), nitrous oxide (N2O), and ammonia (NH3) as the reactive gases.
Proceedings ArticleDOI
Modulation of drain current by redox-active molecules incorporated in Si MOSFETs
Srivardhan Gowda,Guru Mathur,Qiliang Li,Shyam Surthi,Qian Zhao,Jonathan S. Lindsey,David F. Bocian,Veena Misra +7 more
TL;DR: In this article, a redox-active molecular monolayers were incorporated in MOSFETs to modulate the device characteristics and discrete molecular states were manifested in the drain current characteristics indicating the presence of distinct energy levels at room temperature.
Journal ArticleDOI
Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application
TL;DR: In this article, the work function of NiSi and MoSi via full consumption of undoped silicon layers was evaluated in terms of work function and thermal stability, and the effect of dielectric interaction as a result of silicide formation was studied using current-voltage characteristics.