Veena Misra

TL;DR: In this article, the authors proposed a hybrid microelectronic memory device, which consists of a substrate having a surface, a first region of first work function adjacent the surface, and a second region of second work functions adjacent the substrate and adjacent the first region; and an electrode connected to the film.

TL;DR: In this article, the impact of post deposition annealing (PDA) conditions on the mobility of MOSFETs with LaSiOx is investigated, and it is shown that the electron mobility of the La-containing devices is limited by the phonon scattering as opposed to the coulombic scattering, indicating improved interface properties.

TL;DR: In this paper, the slow oxide trap density of thin RTCVD oxinitride films has been characterized by low frequency noise measurements in MOS transistors and the comparison to the results obtained on thermal oxides clearly demonstrates that the slow oxide trap density is proportional to the excess interface charge and is exponentially dependent on the nitrogen concentration in the film.

TL;DR: In this article, the authors highlight the contribution of E a and band-offset to conductance change in RRAM dielectrics, and show that the lower E a of the dielectric helps in generating higher number of vacancies during set and higher band-offset limits the TAT current during reset, resulting in higher conductance changes in Al 2 O 3 RRAM compared to HfO 2 RRAM.

TL;DR: In this article, the effect of boron concentration on the critical thickness of Si1−x−yGex alloys has been studied using Raman spectroscopy.