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Veena Misra
Researcher at North Carolina State University
Publications - 251
Citations - 5283
Veena Misra is an academic researcher from North Carolina State University. The author has contributed to research in topics: Gate dielectric & Dielectric. The author has an hindex of 39, co-authored 249 publications receiving 4954 citations. Previous affiliations of Veena Misra include University of North Carolina at Chapel Hill & Motorola.
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Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
TL;DR: In this article, the enhancement mode operation is enabled by charge storage characteristics within a high-k layer of a MOSHFET, where the gate leakage current, transconductance, and off-state breakdown after programming are similar to the initial device.
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Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors
V. Kaushal,Ignacio Iniguez-de-la-Torre,Tomas Gonzalez,Javier Mateos,Bongmook Lee,Veena Misra,Martin Margala +6 more
TL;DR: In this article, the authors presented the first successful integration of a high-k dielectric, i.e., Al2O3, with III-V semiconductors in ballistic deflection transistors.
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Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal
TL;DR: In this article, the effect of a high-temperature forming gas anneal (FGA) on the electrical characteristics and threshold voltage (VT) instability of high-mobility Si-face (0001) 4H-SiC metal oxide semiconductor field effect transistors (MOSFETs) with lanthanum silicate (LaSiOx) was reported.
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Influence of oxygen diffusion through capping layers of low work function metal gate electrodes
Bei Chen,Rashmi Jha,H. Lazar,Nivedita Biswas,Jae-Hoon Lee,Bongmook Lee,L. Wielunski,Eric Garfunkel,Veena Misra +8 more
TL;DR: In this article, Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications were evaluated and it was shown that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work function value on SiO/sub 2.
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Platinum Germanosilicide Contacts Formed on Strained and Relaxed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Layers
TL;DR: The results show that the resistance, surface morphology, and the crystalline structure of the PtSi-Ge films are independent of the strain in the original Si-1-x-x Ge-x layer, and that PtSiGe-x does not influence the strains in the Si-X layer.