Veena Misra

TL;DR: In this paper, a transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium.

TL;DR: This report explores the promise that wearable biosensors, along with integrated mobile apps, hold for improving the quality of patient care and clinical outcomes and the broad societal implications of using mobile health technologies.

TL;DR: In this paper, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively.

TL;DR: In this article, metal-oxide-semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and zrO2.

TL;DR: In this article, the authors address current challenges in the fundamental understanding of physical and chemical processes that occur in the fabrication of the transistor gate stack structure, including the interface between bulk silicon and high-dielectric-constant (high-ĸ) insulators, and internal interfaces that form within dielectric stacks with nonuniform material and structure compositions.