抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

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High-κ gate dielectrics: Current status and materials properties considerations

There is a special reason for reviewing this book at this time: it is the 50th edition of a compendium that is known and used frequently in most chemical and physical laboratories in many parts of the world. Surely, a publication that has been published for 56 years, withstanding the vagaries of science in this century, must have had something to offer. There is another reason: while the book is a standard fixture in most chemical and physical laboratories, including those in medical centers, it is not as frequently seen in the laboratories of physician's offices (those either in solo or group practice). I believe that the Handbook can be useful in those laboratories. One of the reasons, among others, is that the various basic items of information it offers may be helpful in new tests, either physical or chemical, which are continuously being published. The basic information may relate

Handbook of Chemistry and Physics

Coinage metals, such as Au, Ag, and Cu, have been important materials throughout history.1 While in ancient cultures they were admired primarily for their ability to reflect light, their applications have become far more sophisticated with our increased understanding and control of the atomic world. Today, these metals are widely used in electronics, catalysis, and as structural materials, but when they are fashioned into structures with nanometer-sized dimensions, they also become enablers for a completely different set of applications that involve light. These new applications go far beyond merely reflecting light, and have renewed our interest in maneuvering the interactions between metals and light in a field known as plasmonics.2–6

In plasmonics, the metal nanostructures can serve as antennas to convert light into localized electric fields (E-fields) or as waveguides to route light to desired locations with nanometer precision. These applications are made possible through a strong interaction between incident light and free electrons in the nanostructures. With a tight control over the nanostructures in terms of size and shape, light can be effectively manipulated and controlled with unprecedented accuracy.3,7 While many new technologies stand to be realized from plasmonics, with notable examples including superlenses,8 invisible cloaks,9 and quantum computing,10,11 conventional technologies like microprocessors and photovoltaic devices could also be made significantly faster and more efficient with the integration of plasmonic nanostructures.12–15 Of the metals, Ag has probably played the most important role in the development of plasmonics, and its unique properties make it well-suited for most of the next-generation plasmonic technologies.16–18

1.1. What is Plasmonics?
Plasmonics is related to the localization, guiding, and manipulation of electromagnetic waves beyond the diffraction limit and down to the nanometer length scale.4,6 The key component of plasmonics is a metal, because it supports surface plasmon polariton modes (indicated as surface plasmons or SPs throughout this review), which are electromagnetic waves coupled to the collective oscillations of free electrons in the metal.

While there are a rich variety of plasmonic metal nanostructures, they can be differentiated based on the plasmonic modes they support: localized surface plasmons (LSPs) or propagating surface plasmons (PSPs).5,19 In LSPs, the time-varying electric field associated with the light (Eo) exerts a force on the gas of negatively charged electrons in the conduction band of the metal and drives them to oscillate collectively. At a certain excitation frequency (w), this oscillation will be in resonance with the incident light, resulting in a strong oscillation of the surface electrons, commonly known as a localized surface plasmon resonance (LSPR) mode.20 This phenomenon is illustrated in Figure 1A. Structures that support LSPRs experience a uniform Eo when excited by light as their dimensions are much smaller than the wavelength of the light.



Figure 1

Schematic illustration of the two types of plasmonic nanostructures discussed in this article as excited by the electric field (Eo) of incident light with wavevector (k). In (A) the nanostructure is smaller than the wavelength of light and the free electrons ...



In contrast, PSPs are supported by structures that have at least one dimension that approaches the excitation wavelength, as shown in Figure 1B.4 In this case, the Eo is not uniform across the structure and other effects must be considered. In such a structure, like a nanowire for example, SPs propagate back and forth between the ends of the structure. This can be described as a Fabry-Perot resonator with resonance condition l=nλsp, where l is the length of the nanowire, n is an integer, and λsp is the wavelength of the PSP mode.21,22 Reflection from the ends of the structure must also be considered, which can change the phase and resonant length. Propagation lengths can be in the tens of micrometers (for nanowires) and the PSP waves can be manipulated by controlling the geometrical parameters of the structure.23

/pdf/controlling-the-synthesis-and-assembly-of-silver-1ktlgomyt6.pdf

Controlling the synthesis and assembly of silver nanostructures for plasmonic applications

The discovery of the enhancement of Raman scattering by molecules adsorbed on nanostructured metal surfaces is a landmark in the history of spectroscopic and analytical techniques. Significant experimental and theoretical effort has been directed toward understanding the surface-enhanced Raman scattering (SERS) effect and demonstrating its potential in various types of ultrasensitive sensing applications in a wide variety of fields. In the 45 years since its discovery, SERS has blossomed into a rich area of research and technology, but additional efforts are still needed before it can be routinely used analytically and in commercial products. In this Review, prominent authors from around the world joined together to summarize the state of the art in understanding and using SERS and to predict what can be expected in the near future in terms of research, applications, and technological development. This Review is dedicated to SERS pioneer and our coauthor, the late Prof. Richard Van Duyne, whom we lost during the preparation of this article.

/pdf/present-and-future-of-surface-enhanced-raman-scattering-34aqgcm385.pdf

Present and Future of Surface-Enhanced Raman Scattering

Implications of Lower Zero-Field Activation Energy of Dielectric in Al2O3/HfO2 Bi-Layer Dielectric RRAM Forming Process

Self-assembled monolayers of redox-active molecules with phosphonate linkers have been attached to silicon dioxide (SiO/sub 2/) surfaces. These redox-active molecules exhibit charge states at distinct voltages. Conventional cyclic voltammetry techniques and impedance spectroscopy have been used to characterize capacitor structures formed using these monolayers, with electrolyte as top electrode. Distinct capacitance and conductance peaks have been observed, which confirm the processes of charging and discharging of the molecules. Attachments of these redox-active molecules have been achieved on varying thickness of SiO/sub 2/, ranging from 1 to 3 nm. Measurements have revealed the dependence of the tunneling rate on the oxide thickness and frequency of measurement. The oxidation and reduction voltages changed with the varying oxide thickness and hysteresis was also observed. These voltage shifts and hysteresis of the molecular capacitors were found to increase with increasing SiO/sub 2/ thickness. With increasing frequency, decrease in capacitance peaks and increase in conductance peaks were observed until the frequency at which both the peaks disappear. This cut-off frequency was seen to decrease with increasing thickness of the oxide. These results verify the presence of reversible charge trapping, a key requirement for memory applications.

Hybrid CMOS/molecular memories using redox-active self-assembled monolayers

Ultra-low power room temperature NO2 sensors are demonstrated using AlGaN/GaN. The chemically stable semiconductor was sensitized to increase the sensitivity to enable ultra-low power, low ppb level detection without additional heaters. Sensors were sensitized by two methods, ultra-thin ALD SnO2 and surface enhancement by ICP-RIE in BCl3 gas. Both sensitization techniques demonstrate room temperature response, while the unsensitized sensors did not respond. At room temperature, surface enhanced sensors show a significant increase in sensitivity compared to SnO2 sensitized sensors. Sensitized sensors have fast response times and ultra-low power consumption to enable wearable monitoring systems with high spatial resolution of NO2. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0101510jss] All rights reserved.

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

Lanthanum silicate has many properties making it promising as a high-k gate dielectric for CMOS or advanced capacitor applications. For example, the amorphous phase has good high temperature stability, and the reaction of La2O3 with SiO2 has proven a means of eliminating interface SiO2 after low temperature processing; resulting in MIS devices with a combination of low EOT values (~0.63 nm) and low leakage at Vfb+1 (~0.1 A/cm). However, reliability and lifetime characteristics of lanthanum silicate have been largely unstudied. These are important specifically for lanthanum silicate due to the propensity of La to form hydroxides and carbonates.

Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric

With the right combination of disruptive features, such as battery free self-powered operation, multimodal sensing capability, comfort, wearability, and continuous data gathering leading to actionable information, the potential of autonomously powered smart sensing nodes can be realized to provide long-term monitoring for health and IoT applications. This paper reports on recent breakthroughs in technologies essential for achieving self-powered operation and shows how engineering both sides of the power equation, namely generation and consumption, can lead to always on operation. This work is being conducted in the NSF funded ERC Center on Advanced Self-Powered Systems of Integrated Sensors and Technologies (ASSIST).

Veena Misra

Papers

Implications of Lower Zero-Field Activation Energy of Dielectric in Al2O3/HfO2 Bi-Layer Dielectric RRAM Forming Process

Hybrid CMOS/molecular memories using redox-active self-assembled monolayers

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric

Optimizing the energy balance to achieve autonomous self-powering for vigilant health and IoT applications