There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Solid-state electrolytes are attracting increasing interest for electrochemical energy storage technologies. In this Review, we provide a background overview and discuss the state of the art, ion-transport mechanisms and fundamental properties of solid-state electrolyte materials of interest for energy storage applications. We focus on recent advances in various classes of battery chemistries and systems that are enabled by solid electrolytes, including all-solid-state lithium-ion batteries and emerging solid-electrolyte lithium batteries that feature cathodes with liquid or gaseous active materials (for example, lithium–air, lithium–sulfur and lithium–bromine systems). A low-cost, safe, aqueous electrochemical energy storage concept with a ‘mediator-ion’ solid electrolyte is also discussed. Advanced battery systems based on solid electrolytes would revitalize the rechargeable battery field because of their safety, excellent stability, long cycle lives and low cost. However, great effort will be needed to implement solid-electrolyte batteries as viable energy storage systems. In this context, we discuss the main issues that must be addressed, such as achieving acceptable ionic conductivity, electrochemical stability and mechanical properties of the solid electrolytes, as well as a compatible electrolyte/electrode interface. This Review details recent advances in battery chemistries and systems enabled by solid electrolytes, including all-solid-state lithium-ion, lithium–air, lithium–sulfur and lithium–bromine batteries, as well as an aqueous battery concept with a mediator-ion solid electrolyte.

Lithium battery chemistries enabled by solid-state electrolytes

The science and technology of ultracapacitors are reviewed for a number of electrode materials, including carbon, mixed metal oxides, and conducting polymers. More work has been done using microporous carbons than with the other materials and most of the commercially available devices use carbon electrodes and an organic electrolytes. The energy density of these devices is 3¯5 Wh/kg with a power density of 300¯500 W/kg for high efficiency (90¯95%) charge/discharges. Projections of future developments using carbon indicate that energy densities of 10 Wh/kg or higher are likely with power densities of 1¯2 kW/kg. A key problem in the fabrication of these advanced devices is the bonding of the thin electrodes to a current collector such the contact resistance is less than 0.1 cm2. Special attention is given in the paper to comparing the power density characteristics of ultracapacitors and batteries. The comparisons should be made at the same charge/discharge efficiency.

Ultracapacitors: Why, How, and Where is the Technology

羟氨苄青霉素引起大疱性类天疱疮样疹

Note: Times Cited: 875 Reference EPFL-ARTICLE-206025doi:10.1021/cr0501846View record in Web of Science URL: ://WOS:000249839900009 Record created on 2015-03-03, modified on 2017-05-12

Complex Hydrides for Hydrogen Storage

Seeking to increase the triboelectric charge density on a friction layer is one of the most basic approaches to improve the output performance of triboelectric nanogenerators (TENGs). Here, we studied the storage mechanism of triboelectric charge in the friction layer and discussed the function of carrier mobility and concentration in the charge-storing process. As guided by these results, a kind of composite structure is constructed in the friction layer to adjust the depth distribution of the triboelectric charges and improve the output performance of TENGs. To further elucidate this theory, a simple TENG, whose negative friction layer is a composite structure by integrating polystyrene (PS) and carbon nanotubes (CNTs) into polyvinylidene fluoride (PVDF), was fabricated, and its performance test was also carried out. Comparing with a pure PVDF friction layer, the composite friction layer can raise the triboelectric charge density by a factor of 11.2. The extended residence time of electrons in the frict...

Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layer for a Triboelectric Nanogenerator.

Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than 10(4) s are achieved for nonvolatile memory applications.

Physically Transient Resistive Switching Memory Based on Silk Protein.

Gate-recessed AlGaN/AlN/GaN metal-oxide-semiconductor heterostructure high-mobility transistors (MOS-HEMTs) on SiC substrate are fabricated. The device with a gate length of 0.6 μm and a gate periphery of 100 μm exhibits a maximum dc drain current density of 1.59 A/mm at VGS = 3 V with an extrinsic transconductance (gm) of 374 mS/mm. An extrinsic current gain cutoff frequency (fT) of 19 GHz and a maximum oscillation frequency (fmax) of 50 GHz are deduced from S-parameter measurements. The output power density is 13 W/mm, and the associated power-added efficiency is 73% at 4-GHz frequency and 45-V drain bias. The power performance is comparable to state-of-the art AlGaN/GaN HEMTs, which demonstrates the great potential of gate-recessed MOS-HEMTs as a very promising alternative to GaN HEMTs.

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Electroless Plating of Highly Efficient Bifunctional Boride-Based Electrodes toward Practical Overall Water Splitting

In this letter, the interface traps of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were characterized quantitatively by dynamic capacitance dispersion technique. An analysis of Al2O3/AlGaN interface states demonstrated deep traps in the range of 0.53 eV-1.16 eV below the conduction band, with trap density nearly constant and two orders of magnitude smaller than that at AlGaN surface due to the use of atomic layer deposition-grown Al2O3 insulator. As much as 2.23 × 1013 eV−1 cm−2 fast traps with time constant smaller than 0.3 μs were observed at AlGaN/GaN interface of MOS-HEMTs, which was consistent with the qualitative prediction from pulsed I-V test.

Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

Xiaohua Ma

Papers

Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layer for a Triboelectric Nanogenerator.

Physically Transient Resistive Switching Memory Based on Silk Protein.

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Electroless Plating of Highly Efficient Bifunctional Boride-Based Electrodes toward Practical Overall Water Splitting

Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique