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Xiaohua Ma
Researcher at Xidian University
Publications - 531
Citations - 5629
Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: High-electron-mobility transistor & Threshold voltage. The author has an hindex of 29, co-authored 380 publications receiving 3523 citations. Previous affiliations of Xiaohua Ma include Fudan University.
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Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layer for a Triboelectric Nanogenerator.
TL;DR: The storage mechanism of triboelectric charge in the friction layer is studied and the function of carrier mobility and concentration in the charge-storing process is discussed, and a kind of composite structure is constructed in theriction layer to adjust the depth distribution of the triboeLECTric charges and improve the output performance of TENGs.
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Physically Transient Resistive Switching Memory Based on Silk Protein.
TL;DR: Physically transient resistive switching devices based on silk protein are successfully demonstrated and a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than10(4) s are achieved for nonvolatile memory applications.
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High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency
TL;DR: In this article, gate-recessed AlGaN/AlN/GaN metal-oxide-semiconductor heterostructure high-mobility transistors (MOS-HEMTs) on SiC substrate are fabricated.
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Electroless Plating of Highly Efficient Bifunctional Boride-Based Electrodes toward Practical Overall Water Splitting
Weiju Hao,Renbing Wu,Ruiqi Zhang,Yuan Ha,Ziliang Chen,Lincai Wang,Yanjing Yang,Xiaohua Ma,Dalin Sun,Fang Fang,Yanhui Guo +10 more
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Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique
TL;DR: In this paper, the interface traps of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were characterized quantitatively by dynamic capacitance dispersion technique.