1980 Preface * 1999 Preface * 1999 Acknowledgements * Introduction * 1 Circular Logic * 2 Phase Singularities (Screwy Results of Circular Logic) * 3 The Rules of the Ring * 4 Ring Populations * 5 Getting Off the Ring * 6 Attracting Cycles and Isochrons * 7 Measuring the Trajectories of a Circadian Clock * 8 Populations of Attractor Cycle Oscillators * 9 Excitable Kinetics and Excitable Media * 10 The Varieties of Phaseless Experience: In Which the Geometrical Orderliness of Rhythmic Organization Breaks Down in Diverse Ways * 11 The Firefly Machine 12 Energy Metabolism in Cells * 13 The Malonic Acid Reagent ('Sodium Geometrate') * 14 Electrical Rhythmicity and Excitability in Cell Membranes * 15 The Aggregation of Slime Mold Amoebae * 16 Numerical Organizing Centers * 17 Electrical Singular Filaments in the Heart Wall * 18 Pattern Formation in the Fungi * 19 Circadian Rhythms in General * 20 The Circadian Clocks of Insect Eclosion * 21 The Flower of Kalanchoe * 22 The Cell Mitotic Cycle * 23 The Female Cycle * References * Index of Names * Index of Subjects

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/596B270197FE27DE5FABB598B6210622/S0025557200150892a.pdf/div-class-title-span-class-italic-the-geometry-of-biological-time-span-by-a-t-winfree-pp-544-dm68-corrected-second-printing-1990-isbn-3-540-52528-9-springer-div.pdf

The geometry of biological time , by A. T. Winfree. Pp 544. DM68. Corrected Second Printing 1990. ISBN 3-540-52528-9 (Springer)

https://users.dimi.uniud.it/~antonio.dangelo/Robotica/2012/helper/leggedRobot/Ijspeert08NN.pdf

2008 Special Issue: Central pattern generators for locomotion control in animals and robots: A review

The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

Single-electron devices and their applications

The electronic properties of inorganic devices such as memristors can be used to simulate neurological behaviour. In particular, ionic and electronic effects in a silver sulphide device are now shown to mimic short- and long-term synaptic functions. Memory is believed to occur in the human brain as a result of two types of synaptic plasticity: short-term plasticity (STP) and long-term potentiation (LTP; refs 1, 2, 3, 4). In neuromorphic engineering5,6, emulation of known neural behaviour has proven to be difficult to implement in software because of the highly complex interconnected nature of thought processes. Here we report the discovery of a Ag2S inorganic synapse, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time. The structure known as an atomic switch7,8, operating at critical voltages, stores information as STP with a spontaneous decay of conductance level in response to intermittent input stimuli, whereas frequent stimulation results in a transition to LTP. The Ag2S inorganic synapse has interesting characteristics with analogies to an individual biological synapse, and achieves dynamic memorization in a single device without the need of external preprogramming. A psychological model related to the process of memorizing and forgetting is also demonstrated using the inorganic synapses. Our Ag2S element indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.

/pdf/short-term-plasticity-and-long-term-potentiation-mimicked-in-3c6onjbc0r.pdf

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

Computational geometry

Single-Electron Majority Logic Circuits

A super self-aligned process technology, SST-1B, which is an advanced version of the previously proposed SST-1A in high-speed Si bipolar LSIs is discussed. A selectively ion-implanted collector (SIC) process and bird's-beak-free isolation process are utilized. The SIC process is designed to improve shallow base-collector profiles in the intrinsic region. It reduces base width and intrinsic base resistance, and suppresses the base push-out effect (Kirk's effect) in high-current operations. The SIC profile is easily controlled by 150-200 keV phosphorous ion implantation at the base-collector junction. Using these processes, SST-1B has achieved a high cutoff frequency of 21.1 to 25.7 GHz and a fast switching delay of 20.5 ps/G for nonthreshold logic and 34.1 ps/G for emitter-coupled logic. SST-1B has potential applications to 50-ps/G logic LSIs and 10-GHz SSIs. Device simulation indicates that it is possible to achieve a cutoff frequency of 40-50 GHz in a future scaled-down Si bipolar transistor with a 40-nm base and graded collector. >

A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantation

A low-power CMOS current reference circuit was developed using a 0.35-μm standard CMOS process technology. The circuit consists of MOSFET circuits operating in the subthreshold region and uses no resistors. It compensates for the temperature effect on mobility μ and threshold voltage VTH of MOSFETs and generates a reference current that is insensitive to temperature and supply voltage. Theoretical analyses and experimental results showed that the circuit generates a stable reference current of 100 nA. The temperature coefficient of the current was 520 ppm/°C at best and 600 ppm/°C on average in the range of 0°C-80°C. The line regulation was 0.2%/V in a supply voltage range of 1.8-3 V. The power dissipation was 1 μW, and the chip area was 0.015 mm2. Our circuit would be suitable for use in subthreshold-operated power-aware large-scale integrations.

/pdf/a-1-mu-hbox-w-600-hbox-ppm-circ-hbox-c-current-reference-33o54xe6lc.pdf

A 1- $\mu\hbox{W}$ 600- $\hbox{ppm}/^{\circ}\hbox{C}$ Current Reference Circuit Consisting of Subthreshold CMOS Circuits

A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10 b. The charge injection can be carried out without disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSIs. >

Yoshihito Amemiya

Papers

Single-Electron Majority Logic Circuits

Single-Electron Majority Logic Circuits

A 20-ps Si bipolar IC using advanced super self-aligned process technology with collector ion implantation

A 1- $\mu\hbox{W}$ 600- $\hbox{ppm}/^{\circ}\hbox{C}$ Current Reference Circuit Consisting of Subthreshold CMOS Circuits

A floating-gate analog memory device for neural networks