1980 Preface * 1999 Preface * 1999 Acknowledgements * Introduction * 1 Circular Logic * 2 Phase Singularities (Screwy Results of Circular Logic) * 3 The Rules of the Ring * 4 Ring Populations * 5 Getting Off the Ring * 6 Attracting Cycles and Isochrons * 7 Measuring the Trajectories of a Circadian Clock * 8 Populations of Attractor Cycle Oscillators * 9 Excitable Kinetics and Excitable Media * 10 The Varieties of Phaseless Experience: In Which the Geometrical Orderliness of Rhythmic Organization Breaks Down in Diverse Ways * 11 The Firefly Machine 12 Energy Metabolism in Cells * 13 The Malonic Acid Reagent ('Sodium Geometrate') * 14 Electrical Rhythmicity and Excitability in Cell Membranes * 15 The Aggregation of Slime Mold Amoebae * 16 Numerical Organizing Centers * 17 Electrical Singular Filaments in the Heart Wall * 18 Pattern Formation in the Fungi * 19 Circadian Rhythms in General * 20 The Circadian Clocks of Insect Eclosion * 21 The Flower of Kalanchoe * 22 The Cell Mitotic Cycle * 23 The Female Cycle * References * Index of Names * Index of Subjects

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/596B270197FE27DE5FABB598B6210622/S0025557200150892a.pdf/div-class-title-span-class-italic-the-geometry-of-biological-time-span-by-a-t-winfree-pp-544-dm68-corrected-second-printing-1990-isbn-3-540-52528-9-springer-div.pdf

The geometry of biological time , by A. T. Winfree. Pp 544. DM68. Corrected Second Printing 1990. ISBN 3-540-52528-9 (Springer)

https://users.dimi.uniud.it/~antonio.dangelo/Robotica/2012/helper/leggedRobot/Ijspeert08NN.pdf

2008 Special Issue: Central pattern generators for locomotion control in animals and robots: A review

The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.

Single-electron devices and their applications

The electronic properties of inorganic devices such as memristors can be used to simulate neurological behaviour. In particular, ionic and electronic effects in a silver sulphide device are now shown to mimic short- and long-term synaptic functions. Memory is believed to occur in the human brain as a result of two types of synaptic plasticity: short-term plasticity (STP) and long-term potentiation (LTP; refs 1, 2, 3, 4). In neuromorphic engineering5,6, emulation of known neural behaviour has proven to be difficult to implement in software because of the highly complex interconnected nature of thought processes. Here we report the discovery of a Ag2S inorganic synapse, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time. The structure known as an atomic switch7,8, operating at critical voltages, stores information as STP with a spontaneous decay of conductance level in response to intermittent input stimuli, whereas frequent stimulation results in a transition to LTP. The Ag2S inorganic synapse has interesting characteristics with analogies to an individual biological synapse, and achieves dynamic memorization in a single device without the need of external preprogramming. A psychological model related to the process of memorizing and forgetting is also demonstrated using the inorganic synapses. Our Ag2S element indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.

/pdf/short-term-plasticity-and-long-term-potentiation-mimicked-in-3c6onjbc0r.pdf

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

Computational geometry

SUMMARY An ultralow power constant reference current circuit with low temperature dependence for micropower electronic applications is proposed in this paper. This circuit consists of a constant-current subcircuit and a bias-voltage subcircuits, and it compensates for the temperature characteristics of mobility µ, thermal voltage VT , and threshold voltage VTH in such a way that the reference current has small temperature dependence. A SPICE simulation demonstrated that reference current and total power dissipation is 97.7 nA, 1.1 µW, respectively, and the variation in the reference current can be kept very small within ±4% in a temperature range from −20 to 100 ◦ C.

/pdf/ultralow-power-current-reference-circuit-with-low-4e4b8caoe1.pdf

Ultralow-Power Current Reference Circuit with Low Temperature Dependence

An ultra-low-power temperature sensor circuit has been developed using a 0.35-µm standard CMOS process. The circuit consists of a proportional-to-absolute-temperature (PTAT) current generator and a frequency-locked loop, and generates a PTAT clock frequency. The PTAT current generator is the key component of the sensor and was constructed by using the characteristics of a MOSFET in the subthreshold region. Theoretical analyses and experimental results showed that the circuit can be used as a temperature sensor with ultra-low-power consumption of 10 µW or less. The accuracy of the sensor output was within ±1.8°C in a temperature range from 10°C to 80°C. Our sensor would be suitable for use in subthreshold-operated, power-aware LSIs.

/pdf/temperature-to-frequency-converter-consisting-of-1nqld6emq5.pdf

Temperature-to-frequency converter consisting of subthreshold mosfet circuits for smart temperature-sensor LSIs

A novel CMOS circuit for depressing synapse and its application to contrast-invariant pattern classification and synchrony detection

SUMMARY A multiple-valued logic inverter is proposed that uses single-electron-tunneling (SET) circuits in which the discreteness of the electron charge is utilized.The inverter circuit, which is composed of only two SET transistors, has a memory function as well as an inverter function for multiple-valued logic.A quantizing circuit and a D flip-flop circuit for multiplevalued logic can be compactly constructed by combining two inverters.A threshold device can be compactly constructed by attaching more than one input capacitor to the inverter circuit. A quaternary full adder circuit can be constructed by using two threshold devices.Implementation issues are also discussed.

Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit (Special Issue on Integrated Electronics and New System Paradigms)

High‐carrier‐mobility InSb‐based mixed crystal films, InAsxSb1−x (0<x <0.37) and In1−xGaxSb (0<x <1), were prepared by a vacuum evaporation technique for application to galvanomagnetic devices. Temperature dependence of the Hall coefficients and Hall mobilities were measured at temperatures between 90 and 570 °K. The absolute‐zero energy gap estimated from the Hall measurement of the InAsxSb1−x films exhibits a minimum of 0.16 eV at about 35 ∼ 37 mole% InAs. The transport properties of the mixed crystal films are both dominated by an unknown scattering process which decrases the electron mobility of InSb films at low temperatures.

Yoshihito Amemiya

Papers

Ultralow-Power Current Reference Circuit with Low Temperature Dependence

Temperature-to-frequency converter consisting of subthreshold mosfet circuits for smart temperature-sensor LSIs

A novel CMOS circuit for depressing synapse and its application to contrast-invariant pattern classification and synchrony detection

Multiple-Valued Inverter Using a Single-Electron-Tunneling Circuit (Special Issue on Integrated Electronics and New System Paradigms)

Electrical properties of InSb-based mixed crystal films