Delft University of Technology

About: Delft University of Technology is a education organization based out in Delft, Zuid-Holland, Netherlands. It is known for research contribution in the topics: Computer science & Catalysis. The organization has 37681 authors who have published 94404 publications receiving 2741710 citations. The organization is also known as: TU-Delft & Technische Hogeschool Delft.

Orbital Kondo effect in carbon nanotubes

Abstract: Progress in the fabrication of nanometre-scale electronic devices is opening new opportunities to uncover deeper aspects of the Kondo effect--a characteristic phenomenon in the physics of strongly correlated electrons. Artificial single-impurity Kondo systems have been realized in various nanostructures, including semiconductor quantum dots, carbon nanotubes and individual molecules. The Kondo effect is usually regarded as a spin-related phenomenon, namely the coherent exchange of the spin between a localized state and a Fermi sea of delocalized electrons. In principle, however, the role of the spin could be replaced by other degrees of freedom, such as an orbital quantum number. Here we show that the unique electronic structure of carbon nanotubes enables the observation of a purely orbital Kondo effect. We use a magnetic field to tune spin-polarized states into orbital degeneracy and conclude that the orbital quantum number is conserved during tunnelling. When orbital and spin degeneracies are present simultaneously, we observe a strongly enhanced Kondo effect, with a multiple splitting of the Kondo resonance at finite field and predicted to obey a so-called SU4 symmetry.

Catalysts for the oxidation of soot from diesel exhaust gases. I. An exploratory study

Abstract: A large number of candidate soot oxidation catalysts were screened on their catalytic activity with a model soot. It was found that the intensity of contact between soot and catalyst is one of the major parameters that determine the soot oxidation rate. Two types of contact were studied; many catalysts increase the rate of soot oxidation considerably when the contact is intimate (‘tight’), whereas under conditions of poor (‘loose’) contact only some catalysts accelerate this oxidation reaction. It is tentatively suggested that (i) mobility of the catalyst is a major parameter determining the loose contact activity of catalysts and (ii) this mobility correlates with the melting point or the partial pressure of the catalyst.

Quantitative evaluation of intracellular metabolite extraction techniques for yeast metabolomics.

Abstract: Accurate determination of intracellular metabolite levels requires well-validated procedures for sampling and sample treatment. Several methods exist for metabolite extraction, but the literature is contradictory regarding the adequacy and performance of each technique. Using a strictly quantitative approach, we have re-evaluated five methods (hot water, HW; boiling ethanol, BE; chloroform−methanol, CM; freezing-thawing in methanol, FTM; acidic acetonitrile−methanol, AANM) for the extraction of 44 intracellular metabolites (phosphorylated intermediates, amino acids, organic acids, nucleotides) from S. cerevisiae cells. Two culture modes were investigated (batch and chemostat) to check for growth condition dependency, and three targeted platforms were employed (two LC-MS and one GC/MS) to exclude analytical bias. Additionally, for the determination of metabolite recoveries, we applied a novel approach based on addition of 13C-labeled internal standards at different stages of sample processing. We found tha...

Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits

Abstract: This paper introduces floating shields for on-chip transmission lines, inductors, and transformers implemented in production silicon CMOS or BiCMOS technologies. The shield minimizes losses without requiring an explicit on-chip ground connection. Experimental measurements demonstrate Q-factor ranging from 25 to 35 between 15 and 40 GHz for shielded coplanar waveguide fabricated on 10 /spl Omega//spl middot/cm silicon. This is more than a factor of 2 improvement over conventional on-chip transmission lines (e.g., microstrip, CPW). A floating-shielded, differentially driven 7.4-nH inductor demonstrates a peak Q of 32, which is 35% higher than an unshielded example. Similar results are realizable for on-chip transformers. Floating-shielded bond-pads with 15% less parasitic capacitance and over 60% higher shunt equivalent resistance compared to conventional shielded bondpads are also described. Implementation of floating shields is compatible with current and projected design constraints for production deep-submicron silicon technologies without process modifications. Application examples of floating-shielded passives implemented in a 0.18-/spl mu/m SiGe-BiCMOS are presented, including a 21-26-GHz power amplifier with 23-dBm output at 20% PAE (at 22 GHz), and a 17-GHz WLAN image-reject receiver MMIC which dissipates less than 65 mW from a 2-V supply.