Delft University of Technology

About: Delft University of Technology is a education organization based out in Delft, Zuid-Holland, Netherlands. It is known for research contribution in the topics: Computer science & Catalysis. The organization has 37681 authors who have published 94404 publications receiving 2741710 citations. The organization is also known as: TU-Delft & Technische Hogeschool Delft.

Highly Improved Quantum Efficiencies for Thin Film BiVO4 Photoanodes

Abstract: BiVO4 has received much recent interest as a promising photocatalyst for oxygen evolution from water, but little is known about the factors that limit its performance as a photoanode. In this article, we report on highly efficient and reproducible BiVO4 photoanodes prepared by a new spray pyrolysis recipe. For undoped films deposited on a transparent conducting substrate (F-doped SnO2, FTO), electron transport and charge collection at the back-contact were found to limit the photoresponse. Electron transport could be greatly enhanced by donor-doping with 1% W, while the charge collection problem has been solved by introducing a thin (∼10 nm) interfacial layer of SnO2 in between the FTO and the BiVO4. This layer presumably acts as a hole mirror that prevents recombination via FTO-related defect states at the FTO/BiVO4 interface. By addressing these two issues, the external quantum efficiency (IPCE) of spray-deposited BiVO4 films was improved by a factor of ∼7, leading to an unprecedented IPCE of 46% (at 45...

Shear Force Development by Pneumatic Tyres in Steady State Conditions: A Review of Modelling Aspects

Abstract: SUMMARY Modelling of the generation of shear forces by pneumatic tyres under steady state conditions is reviewed. The review is placed in a practical context, through reference to the uses to which models may be put by the vehicle dynamicist and the tyre designer. It will be of interest also to the student of rolling contact problems. The subject is divided into sections, covering physically founded models which require computation for their solution, physically based models which are sufficiently simplified to allow analytical solutions and formula based, empirical models. The classes are more nearly continuous than this strict division would imply, since approximations in obtaining analytical solutions may be made, empirical correction factors may be applied to analytical results and formula based methods may take into account tyre mechanical principles. Such matters are discussed in the relevant sections. Attention is given to the important matter of choosing model parameters to best represent the beha...

A CMOS smart temperature sensor with a 3/spl sigma/ inaccuracy of /spl plusmn/0.1/spl deg/C from -55/spl deg/C to 125/spl deg/C

Abstract: A low-cost temperature sensor with on-chip sigma-delta ADC and digital bus interface was realized in a 0.5 /spl mu/m CMOS process. Substrate PNP transistors are used for temperature sensing and for generating the ADC's reference voltage. To obtain a high initial accuracy in the readout circuitry, chopper amplifiers and dynamic element matching are used. High linearity is obtained by using second-order curvature correction. With these measures, the sensor's temperature error is dominated by spread on the base-emitter voltage of the PNP transistors. This is trimmed after packaging by comparing the sensor's output with the die temperature measured using an extra on-chip calibration transistor. Compared to traditional calibration techniques, this procedure is much faster and therefore reduces production costs. The sensor is accurate to within /spl plusmn/0.5/spl deg/C (3/spl sigma/) from -50/spl deg/C to 120/spl deg/C.