Journal ArticleDOI
A 1.0-V V/sub DD/ CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25-/spl mu/m CMOS process
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TLDR
In this paper, a complementary active pixel sensor (CAPS) architecture is developed to operate at a voltage below 1 V V/sub DD/ without using bootstrapping techniques.Abstract:
In this paper, an architecture to design a CMOS active-pixel sensor (APS) in an extremely low-voltage environment imposed by advanced CMOS technology is proposed. A complementary active pixel sensor (CAPS) architecture is developed to allow a CMOS active pixel to operate at a voltage below 1 V V/sub DD/ without using bootstrapping techniques. A fixed voltage deference (FVD) method with correlated double sampling is used to increase the dynamic range of the readout circuit. Both the CAPS and FVD readout circuits together, with an 8-b analog-to-digital converter, are implemented in a commercially available 0.25-/spl mu/m, single-poly and five-metal CMOS process. Measurement results show that the circuit is functional at a V/sub DD/ below 1 V with 15-dB added dynamic range compared with a conventional CMOS APS architecture.read more
Citations
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Proceedings ArticleDOI
Demonstration of a low-voltage three-transistor-per-pixel CMOS imager based on a pulse-width-modulation readout scheme employed with a one-transistor in-pixel comparator
Sanshiro Shishido,Itsuki Nagahata,Tatsuya Sasaki,Keiichiro Kagawa,Masahiro Nunoshita,Jun Ohta +5 more
TL;DR: In this article, a pixel structure composed of only three transistors without any circuit sharing technique was proposed to realize a lowvoltage CMOS imager with a small pixel size, which can lower the operating voltage with less degradation of the dynamic range than that of ordinary active pixel sensors.
Proceedings ArticleDOI
Large area X-ray CMOS digital pixel sensor based on pulse width modulation for high frame rate applications
Dong-uk Kang,DohChang Lee,Min-Hye Kim,Chankyu Kim,Minsik Cho,Hongki Yoo,Yung-soo Kim,Hyunmyung Kim,Jongyul Kim,Kyusung Park,Eun-Jae Lee,Kyung Taek Lim,Gyu-Hyeong Cho +12 more
TL;DR: In this article, the authors proposed a digital pixel sensor which has a digital output instead of analog-pixel output as in a conventional 3-transistor pixel, which can provide a high frame because it eliminates analog-to-digital conversion time.
Journal ArticleDOI
Hardware implementation of a CMOS image sensor pixel using complemental signal path
TL;DR: Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process and measured results show that the output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.
Proceedings Article
Low voltage low power CMOS image sensor with a new rail-to-rail readout circuit
Hwang-Cherng Chow,Jen-Bor Hsiao +1 more
TL;DR: In this paper, a new rail-to-rail pixel readout architecture is proposed to enhance the performance of CMOS image sensor for both low voltage and low power applications, which can extend its operating voltage from 3.3V even down to 1.8V for a 0.35 µm process.
References
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Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
A 10000 frames/s CMOS digital pixel sensor
TL;DR: In this paper, a 352/spl times/288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-/spl mu/m CMOS process is described.
Proceedings ArticleDOI
CMOS image sensors: electronic camera on a chip
TL;DR: Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors that permit realization of an electronic camera-on-a-chip.
Journal ArticleDOI
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl mu/m CMOS technology
TL;DR: The device and process design considerations required to enable CMOS as an image sensor technology are highlighted and the impact of device scaling on the image sensing performance can be studied.
Journal ArticleDOI
A single chip CMOS APS camera with direct frame difference output
Shyh-Yih Ma,Liang-Gee Chen +1 more
TL;DR: In this paper, a complementary metaloxide-semiconductor (CMOS) active pixel sensor (APS) camera chip with direct frame difference output is reported, where the pixel circuit occupies 32.2/spl times/32.2 /spl mu/m/sup 2/ with a fill factor of 33%.