Journal ArticleDOI
A 1.0-V V/sub DD/ CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25-/spl mu/m CMOS process
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In this paper, a complementary active pixel sensor (CAPS) architecture is developed to operate at a voltage below 1 V V/sub DD/ without using bootstrapping techniques.Abstract:
In this paper, an architecture to design a CMOS active-pixel sensor (APS) in an extremely low-voltage environment imposed by advanced CMOS technology is proposed. A complementary active pixel sensor (CAPS) architecture is developed to allow a CMOS active pixel to operate at a voltage below 1 V V/sub DD/ without using bootstrapping techniques. A fixed voltage deference (FVD) method with correlated double sampling is used to increase the dynamic range of the readout circuit. Both the CAPS and FVD readout circuits together, with an 8-b analog-to-digital converter, are implemented in a commercially available 0.25-/spl mu/m, single-poly and five-metal CMOS process. Measurement results show that the circuit is functional at a V/sub DD/ below 1 V with 15-dB added dynamic range compared with a conventional CMOS APS architecture.read more
Citations
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Journal ArticleDOI
A CMOS Image Sensor Utilizing Opacity of Nanometallic Particles for DNA Detection
TL;DR: In this paper, a DNA detection protocol utilizing the opacity of self-assembled nanometallic particles and the optical response of a CMOS image sensor was reported, which can detect even single-base mismatched DNA targets with extremely low concentration DNA samples down to 10 pM.
Proceedings ArticleDOI
Ultra low-power DFF based shift registers design for CMOS image sensors applications
TL;DR: The presented DFF and shift-register structures allow implementation of power-efficient shift registers, used for signal readout control and windows of interest definition in CMOS image sensors and are optimized for operation at low frequencies.
Proceedings ArticleDOI
A 1V current-mode CMOS active pixel sensor
TL;DR: A low-voltage current-mode active pixel sensor (APS) capable of operating from a 1 V power supply in a 0.35 /spl mu/m standard CMOS process is proposed.
Journal ArticleDOI
A compact, low-power, and fast pulse-width modulation based digital pixel sensor with no bias circuit
TL;DR: In this paper, a high-speed and compact in-pixel light-to-time converter (LTC) with low power consumption and wide dynamic range is presented, where a digital pixel sensor (DPS) based on a PWM scheme has been designed and fabricated in a standard 180-nm, single-poly, six-metal complementary metal oxide semiconductor (CMOS) technology.
Proceedings ArticleDOI
A CMOS image sensor with reconfigurable resolution for energy harvesting applications
TL;DR: An asynchronous sensor in which the photodetector itself within the pixel can be used as an energy harvesting device, so that the total available energy will be increased.
References
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Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
A 10000 frames/s CMOS digital pixel sensor
TL;DR: In this paper, a 352/spl times/288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-/spl mu/m CMOS process is described.
Proceedings ArticleDOI
CMOS image sensors: electronic camera on a chip
TL;DR: Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors that permit realization of an electronic camera-on-a-chip.
Journal ArticleDOI
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-/spl mu/m CMOS technology
TL;DR: The device and process design considerations required to enable CMOS as an image sensor technology are highlighted and the impact of device scaling on the image sensing performance can be studied.
Journal ArticleDOI
A single chip CMOS APS camera with direct frame difference output
Shyh-Yih Ma,Liang-Gee Chen +1 more
TL;DR: In this paper, a complementary metaloxide-semiconductor (CMOS) active pixel sensor (APS) camera chip with direct frame difference output is reported, where the pixel circuit occupies 32.2/spl times/32.2 /spl mu/m/sup 2/ with a fill factor of 33%.