Journal ArticleDOI
A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA
Fu-Jen Yang,Jeng Gong,Ru-Yi Su,Ker-Hsiao Huo,C.H. Tsai,Chih-Chang Cheng,Ruey-Hsin Liou,Hsiao-Chin Tuan,Chih-Fang Huang +8 more
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TLDR
In this paper, the authors presented a 700-V high-voltage laterally diffused metal-oxide-semiconductor (LDMOS) field effect transistor with a p-body-extension reduce surface field (RESURF) structure.Abstract:
This paper presents a 700-V high-voltage laterally diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with a p-body_Extension reduce surface field (RESURF) structure. Experimental results demonstrate that the low ON resistance and breakdown voltage (BV)- RON,sp figure of merit approach the ideal Baliga's power law, in addition, breaks the quasi-saturation limitation with enhanced device safe operating area (SOA). The optimal charge balance and geometrical design to achieve the lowest specific ON resistance (RON,sp) with the desired maximum high BV are displayed and discussed by simulations and experimental results. The 2-D simulations confirmed that, compared with conventional triple-RESURF structures, the presented device provides a fourfold reduction in the surface electric field on the source side and a 32% improvement in blocking voltage. The specific ON resistance demonstrates superior 40% lower performance than published Junction Isolation LDMOS device families. In addition, its twofold increase in SOA extension can improve the performance of circuit designs for switching power supply applications.read more
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Journal ArticleDOI
Analytical Model and New Structure of the Variable- $k$ Dielectric Trench LDMOS With Improved Breakdown Voltage and Specific ON-Resistance
TL;DR: In this article, a laterally double-diffused metal-oxide-semiconductor transistor with ultralow specific ON-resistance is proposed, and its analytical model for the breakdown voltage (BV) is presented.
Journal ArticleDOI
A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC
Bo Yi,Xingbi Chen +1 more
TL;DR: In this paper, a high-side p-channel LDMOS (p-LDMOS) with an auto-biased n-channel LDMOS based on Triple-RESURF technology is proposed.
Journal ArticleDOI
High-Voltage Thin-SOI LDMOS With Ultralow ON-Resistance and Even Temperature Characteristic
TL;DR: In this paper, an ultralow specific ON-resistance ( $R_{\mathrm{\scriptscriptstyle ON},''mathrm {sp}}$ thin-silicon-on-insulator (SOI) LDMOS is proposed.
Journal ArticleDOI
Novel Reduced ON-Resistance LDMOS With an Enhanced Breakdown Voltage
TL;DR: In this article, a lateral double-diffusion metal oxide semiconductor (LDMOS) is proposed to enhance its breakdown voltage (BV) and reduce specific ON-resistance (RON,sp), and its mechanism is investigated by simulation.
Journal ArticleDOI
Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer
Shengdong Hu,Jun Luo,Yuyu Jiang,Kun Cheng,Yinhui Chen,Jin Jingjing,Jian'an Wang,Jianlin Zhou,Fang Tang,Xichuan Zhou,Ping Gan +10 more
TL;DR: In this article, a partial compound buried layer structure (P-CBL SOI) was proposed for SOI LDMOS, where the top oxide layer at the source-side is replaced by a compound-buried layer (CBL) of "top oxide-middle polysilicon-bottom oxide" and the buried oxide layer is just as the conventional C-SOI, and the influences of structure parameters on the devices performances were investigated.
References
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BookDOI
Fundamentals of Power Semiconductor Devices
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Proceedings ArticleDOI
High voltage thin layer devices (RESURF devices)
J.A. Appels,H.M.J. Vaes +1 more
TL;DR: The RESURF (Reduced SURface Field) as discussed by the authors is a diode-based diode structure for high voltage devices with very thin epitaxial or implanted layers, where crucial changes in the electric field distribution occur at or at least near the surface.
Proceedings ArticleDOI
A review of RESURF technology
TL;DR: The reduced surface field (RESURF) technology is one of the most widely used methods for the design of lateral high-voltage, low on-resistance devices as mentioned in this paper.
Proceedings ArticleDOI
A new 800 V lateral MOSFET with dual conduction paths
TL;DR: In this paper, a novel 800 V lateral MOSFET is presented, which is a buried P-type layer that divides the N-type drift region into two parallel conduction paths.
Proceedings ArticleDOI
On the static performance of the RESURF LDMOSFETS for power ICs
TL;DR: In this article, a technology-specific static relation between the breakdown voltage and the specific on-resistance of lateral diffused MOSFETs has been proposed, which is not only material dependent but also involves two technology-dependent parameters.