Journal ArticleDOI
A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)
TLDR
In this article, a Gummel-Poon model for abrupt and graded GaAlAs/GAAs/GaAs heterojunction bipolar transistors (HBTs) is developed.Abstract:
A Gummel-Poon model for abrupt and graded GaAlAs/GaAs/GaAs heterojunction bipolar transistors (HBTs) is developed. The effect of carrier recombination at the emitter-base heterojunction, space charge region (SCR) width modulation effect, and base-widening effect at large collector currents have been considered. Results from this model are compared with numerical results, experimental results, and results from the most recent analytical models. The results show that the common-emitter current gain behavior in the low collector current region can be predicted more accurately by this model, and that interface and surface recombination affect the current gain more dominantly than the other recombination processes. Dependence of cutoff frequency on collector current obtained from the present model agrees well with the experimental results. This model can also predict both current gain and cutoff frequency falloffs at large collector current. This model can be easily implemented in the SPICE program.read more
Citations
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Journal ArticleDOI
On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors
A.A. Grinberg,Serge Luryi +1 more
TL;DR: In this paper, the minority-carrier transport in heterostructure bipolar transistors is reconsidered with a particular emphasis on the difference between the cases of abrupt and graded emitter-base junctions and the role in the former case of the quasi-Fermi level discontinuity at the interface.
Journal ArticleDOI
An analytical model for current transport in AlGaAs/GaAs abrupt HBTs with a setback layer
TL;DR: In this paper, an analytical model was developed to predict the d.c. performance of the AlGaAs/GaAs abrupt heterojunction bipolar transistor (HBT) with a setback layer.
Journal ArticleDOI
Intermodulation mechanism and linearization of AlGaAs/GaAs HBTs
TL;DR: In this paper, the authors investigated the cancellation effects of nonlinear elements and found that the output nonlinear current components generated by emitter-base current source and base collector current source cancel each other almost exactly, resulting in high linear characteristics of HBTs.
Journal ArticleDOI
A new charge-control model for single- and double-heterojunction bipolar transistors
Chetan D. Parikh,F.A. Lindholm +1 more
TL;DR: In this paper, a charge-control relation for heterojunction bipolar transistors is derived for arbitrary doping density profiles and for all levels of injection in the base, which is applicable to both single and double-heterojunction transistors.
Journal ArticleDOI
A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter-extraction procedure
TL;DR: In this paper, the authors presented a new type of HBT large-signal model which is valid for dc, small signal and large signal ac modes of operation and validated by independent power sweep measurements on HBT's from two different manufacturers.
References
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Journal ArticleDOI
Experiments on Ge-GaAs heterojunctions
TL;DR: In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.
Journal ArticleDOI
An integral charge control model of bipolar transistors
H.K. Gummel,H. C. Poon +1 more
TL;DR: A compact model of bipolar transistors suitable for network analysis computer programs is presented, through the use of a new charge control relation linking junction voltages, collector current, and base charge, which substantially exceeds that of existing models of comparable complexity.
Journal ArticleDOI
A theory of transistor cutoff frequency (f T ) falloff at high current densities
TL;DR: In this paper, it was shown that the observed falloff in the f T of a transistor at high currents is due to the spreading of the neutral base layer into the collector region of the device at high current densities.
Journal ArticleDOI
The effect of surface recombination on current in AlxGa1−xAs heterojunctions
TL;DR: In this paper, it was shown that the 2kT current in double-heterostructure AlxGa1−xAs p−n junctions is primarily due to surface recombination at the junction perimeter.
Journal ArticleDOI
Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers
TL;DR: In this article, the authors used short-circuit photocurrent measurements to determine the minority-carrier diffusion length in GaAs at 298 K. The results showed that the relatively constant diffusion length of p and n−type layers below concentrations of 1×1018 cm−3 is determined by nonradiative recombination.
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On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors
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