Journal ArticleDOI
A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations
TLDR
In this paper, closed-form analytical expressions are obtained to accurately calculate the oxide and substrate capacitances of the on-chip tapered spiral inductors, especially with lower substrate resistivities, and improvement in Qmax with reverse excitation in tapered spirals is also accurately predicted by the proposed model.Abstract:
In this brief, closed-form analytical expressions are obtained to accurately calculate the oxide and substrate (both lateral/vertical) capacitances of the $\pi $ -equivalent circuit model for on-chip tapered spiral inductors. A lateral RC substrate network using the above-mentioned expressions is shown to significantly improve the model accuracy, especially with lower substrate resistivities. Furthermore, improvement in Qmax with reverse excitation in tapered spirals is also accurately predicted by the proposed model. The accuracy of the proposed model is validated till 15 GHz using several inductor geometries across process parameters suitable for the design of RF circuits. Excellent agreement is observed between the model, electromagnetic simulations, and measurements.read more
Citations
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Journal ArticleDOI
Modeling of High- Q Conical Inductors and MOM Capacitors for Millimeter- Wave Applications
TL;DR: In this paper, the linear voltage profile along the turns of the conical inductor is taken into account for capacitance calculation which is critical in accurately predicting ${Q}$ -values.
Journal ArticleDOI
Electrical Modeling and Characterization of Graphene-Based On-Chip Spiral Inductors
TL;DR: In this paper , the electrical performance of graphene-based on-chip spiral inductors was investigated by virtue of a physics-based equivalent circuit model. And the authors demonstrated that the electrical characteristics of the onchip square spiral inductor can be improved by replacing copper with graphene, which exhibits more effectiveness in improving the inductance in tapered inductors than uniform ones.
Journal ArticleDOI
A physical‐based model for on‐chip double‐layer spiral inductors with a ground shield
TL;DR: In this paper , a simple DC inductance model is developed based on self-inductance and mutual inductance of metal segments, which can facilitate the design and optimization of on-chip inductors for RF IC applications.
Proceedings ArticleDOI
Electrical Modeling of On-Chip Spiral Inductors Based on Graphene Ribbons
TL;DR: In this paper , the on-chip spiral inductor based on doped graphene ribbons can significantly improve the inductance density and quality factor compared with traditional Cu counterpart, and the performance improvement of onchip taper spiral inductors is more effective than that of uniform one with equal width.
Proceedings ArticleDOI
Electrical Modeling of On-Chip Spiral Inductors Based on Graphene Ribbons
TL;DR: In this article , the on-chip spiral inductors based on graphene ribbons were modeled and the skin effect, proximity effect and substrate loss effect were properly considered, and the dynamic inductance, quantum resistance and scattering resistance of graphene ribbon were also combined into the circuit model.
References
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Properties of Microstrip Line on Si-SiO/sub 2/ System
H. Hasegawa,M. Furukawa,H. Yanai +2 more
TL;DR: In this article, a parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment.
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Simple formulas for two- and three-dimensional capacitances
Takayasu Sakurai,K. Tamaru +1 more
TL;DR: In this article, simple formulas for wiring capacitances in VLSI, including two-and/or three-dimensional effects, were proposed for a wide range of wire thickness, wire width, and interwire spacing.
Journal ArticleDOI
Stacked inductors and transformers in CMOS technology
TL;DR: In this article, a modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self resonance frequencies of 11.2 to 0.5 GHz.
Journal ArticleDOI
On the design of RF spiral inductors on silicon
TL;DR: In this article, a review of design principles for implementation of a spiral inductor in a silicon integrated circuit fabrication process summarizes prior art in this field, and a fast and physics-based inductor model is exploited to put the results contributed by many different groups in various technologies and achieved over the past eight years into perspective.
Journal ArticleDOI
Substrate crosstalk reduction using SOI technology
TL;DR: In this paper, the authors analyzed both by simulations and measurements the substrate crosstalk performances of various Silicon-On-Insulator (SOI) technologies, and compared them to those of normal bulk CMOS process.