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Journal ArticleDOI

A Wide Tuning-Range CMOS VCO With a Differential Tunable Active Inductor

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TLDR
In this paper, a differential tunable active inductor for the LC-tank was used for a wide tuning-range CMOS voltage-controlled oscillator (VCO) with an output frequency from 500 MHz to 3.0 GHz.
Abstract
By utilizing a differential tunable active inductor for the LC-tank, a wide tuning-range CMOS voltage-controlled oscillator (VCO) is presented. In the proposed circuit topology, the coarse frequency tuning is achieved by the tunable active inductor, while the fine tuning is controlled by the varactor. Using a 0.18-mum CMOS process, a prototype VCO is implemented for demonstration. The fabricated circuit provides an output frequency from 500 MHz to 3.0 GHz, resulting in a tuning range of 143% at radio frequencies. The measured phase noise is from -101 to -118 dBc/Hz at a 1-MHz offset within the entire frequency range. Due to the absence of the spiral inductors, the fully integrated VCO occupies an active area of 150times300 mum2

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Citations
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Journal ArticleDOI

Wideband Multi-Mode CMOS VCO Design Using Coupled Inductors

TL;DR: Compared with conventional switched-resonator-based approaches that consume the same chip area, the proposed coupled-inductor-based resonator results in larger quality-factor, and hence, lower oscillator phase noise, in the proposed multi-mode oscillator that uses the multi-port coupled inductors.
Journal ArticleDOI

A 1.94 to 2.55 GHz, 3.6 to 4.77 GHz Tunable CMOS VCO Based on Double-Tuned, Double-Driven Coupled Resonators

TL;DR: This paper presents a multi-band CMOS VCO using a double-tuned, current-driven transformer load that eliminates the effect of switches connected directly to the VCO tank whose capacitance and on-resistance affect both the tuning range and the phase noise of a typical multi- band oscillator.
Journal ArticleDOI

A Compact Quadrature Hybrid MMIC Using CMOS Active Inductors

TL;DR: In this paper, a 4.2 GHz quadrature hybrid is implemented for monolithic-microwave integrated-circuit applications using a 0.18mum bulk CMOS process.
Journal ArticleDOI

An Active Inductor-Based VCO With Wide Tuning Range and High DC-to-RF Power Efficiency

TL;DR: An active inductor-based voltage-controlled oscillator with a wide frequency tuning range was designed and fabricated using a standard 0.13-μm CMOS process and measured results show that the VCO is tunable from 833 MHz to 3.72 GHz, representing a tuning range of 127%.
Journal ArticleDOI

Wideband Varactorless $LC$ VCO Using a Tunable Negative-Inductance Cell

TL;DR: A wideband LC voltage-controlled oscillator (VCO) design with a new varactorless frequency-tuning technique is presented and has demonstrated performance that is better than other wideband var actorless VCOs in the literature.
References
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Journal ArticleDOI

A general theory of phase noise in electrical oscillators

TL;DR: In this paper, a general model is introduced which is capable of making accurate, quantitative predictions about the phase noise of different types of electrical oscillators by acknowledging the true periodically time-varying nature of all oscillators.
Journal ArticleDOI

Design issues in CMOS differential LC oscillators

TL;DR: In this article, an analysis of phase noise in differential cross-coupled inductance-capacitance (LC) oscillators is presented, and the effect of tail current and tank power dissipation on the voltage amplitude is shown.
Journal ArticleDOI

Concepts and methods in optimization of integrated LC VCOs

TL;DR: In this article, a design strategy centered around an inductance selection scheme is executed using a practical graphical optimization method to optimize phase noise subject to design constraints such as power dissipation, tank amplitude, tuning range, startup condition, and diameters of spiral inductors.
Journal ArticleDOI

A 1.8-GHz LC VCO with 1.3-GHz tuning range and digital amplitude calibration

TL;DR: In this article, a 1.8 GHz LC VCO designed in a 0.18-/spl mu/m CMOS process achieves a very wide tuning range of 73% and measured phase noise of -123.5 dBc/Hz at a 600-kHz offset from a 1 8 GHz carrier while drawing 3.2 mA from a 3.5-V supply.
Journal ArticleDOI

A 5.9-GHz voltage-controlled ring oscillator in 0.18-/spl mu/m CMOS

TL;DR: In this paper, the design of three and nine-stage voltage-controlled ring oscillators that were fabricated in TSMC 0.18/spl mu/m CMOS technology with oscillation frequencies up to 5.9 GHz was presented.
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