Journal ArticleDOI
An analytical compact model for Schottky-barrier double gate MOSFETs
TLDR
In this paper, an analytical and explicit compact model for undoped symmetrical silicon double gate MOSFETs with Schottky barrier (SB) source and drain is presented.Abstract:
An analytical and explicit compact model for undoped symmetrical silicon double gate MOSFETs (DGMOSFETs) with Schottky barrier (SB) source and drain is presented. The SB MOSFET can be studied as a traditional MOSFET where the doped source/drain regions have been replaced by a metal contact. Due to particular features of this new structure, the main transport mechanisms of these devices differ from those found in traditional MOSFETs. The model developed in this paper is based on a previously published DGMOSFET model which has been extended to include the characteristic tunneling transport mechanisms of SB MOSFET. The proposed model reproduces the well known ambipolar behavior found in SB MOSFET for a wide range of metal source and drain contacts specified through different values of their work function. The model has been validated with numerical data obtained by means of the 2D ATLAS simulator, where a SB DGMOSFET structure has been defined and characterized in order to obtain the transfer and output characteristics for several bias configurations. Devices with two channel lengths (2 μm and 3 μm) has been simulated and modeled.read more
Citations
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Journal ArticleDOI
Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack
TL;DR: In this article, a physics-based analytical model for Schottky Barrier Cylindrical Gate All Around (CGAA) MOSFET with high-k dielectric is presented with Evanescent Mode Analysis (EMA).
Journal ArticleDOI
2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET
Prashanth Kumar,Brinda Bhowmick +1 more
TL;DR: An analytical surface potential model of a dual material gate (DMG) Schottky Barrier (SB) metal-oxide-semiconductor field effect transistor (MOSFET) is explored in this paper.
Journal ArticleDOI
Charge-Based Modeling of Transition Metal Dichalcogenide Transistors Including Ambipolar, Trapping, and Negative Capacitance Effects
TL;DR: In this article, a charge-based compact model for transition metal dichalcogenide (TMD)-based thin-channel field effect transistor (FET) is presented.
Journal ArticleDOI
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
TL;DR: In this article, the authors presented a new approach to calculate the channel electric field within a Schottky barrier Double-Gate MOSFET (SB-DG-MOSFet) in sub-threshold region by solving Poissons equation.
Journal ArticleDOI
Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model
Mike Schwarz,Alexander Kloes +1 more
TL;DR: In this article, a comprehensive study and comparison of IV and III-V Schottky barrier (SB) double-gate MOSFETs using a universal analytical model and Synopsys TCAD Sentaurus is presented.
References
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