Journal ArticleDOI
Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
Markus Reusch,Katarzyna Holc,Wilfried Pletschen,Lutz Kirste,Agnė Žukauskaitė,Taro Yoshikawa,D. Iankov,Oliver Ambacher,Vadim Lebedev +8 more
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TLDR
In this article, the influence of process pressure and N2 concentration has been evaluated by means of spectroscopic ellipsometry, residual stress measurements, xray diffraction, atomic and piezoresponse force microscopy, along with analysis of the piezoelectric charge coefficient d33,f.Abstract:
Aluminum nitride (AlN) thin films deposited by reactive radio frequency magnetron sputtering in an Ar/N2 discharge on Si(001) substrates were studied with respect to structure, stress, and piezoelectric properties. In order to optimize the AlN layers for flexural plate wave (FPW) devices, the influence of process pressure and N2 concentration has been evaluated by means of spectroscopic ellipsometry, residual stress measurements, x-ray diffraction, atomic and piezoresponse force microscopy, along with analysis of the piezoelectric charge coefficient d33,f. FPW devices with low compressively stressed (−200 to −300 MPa) AlN layers were prepared and characterized by white light interferometry and Raman measurements. With increasing pressure from 3×10−3 to 8×10−3 mbar, a transition from −840 MPa compressive stress to +300 MPa tensile stress was measured. Increasing the nitrogen concentration from 3.3% to 50% resulted in a change in stress from +150 to −1170 MPa. All films exhibited a high degree of c-axis ori...read more
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Journal ArticleDOI
Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems
Simon Fichtner,Niklas Wolff,Gnanavel Vaidhyanathan Krishnamurthy,A. Petraru,Sascha Bohse,Fabian Lofink,Steffen Chemnitz,Hermann Kohlstedt,Lorenz Kienle,Bernhard Wagner +9 more
TL;DR: In this paper, the authors present evidence of an instability in the morphology of Al1-xScxN, which originates at, or close to, the substrate/Al1−xScXN interface and becomes more pronounced as the Sc content is increased.
Journal ArticleDOI
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
TL;DR: In this article, the residual stress of the sputter-deposited AlN films was suppressed by modifying the sputtering conditions and achieving a threading dislocation density of 2.07 × 108 cm−2 with a thickness of 480 nm.
Journal ArticleDOI
Surface Morphology and Microstructure of Pulsed DC Magnetron Sputtered Piezoelectric AlN and AlScN Thin Films
Yuan Lu,Markus Reusch,Nicolas Kurz,Nicolas Kurz,Anli Ding,Tim Christoph,Lutz Kirste,Vadim Lebedev,Agnė Žukauskaitė +8 more
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Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
Markus Reusch,Markus Reusch,Sabina Cherneva,Yuan Lu,Agnė Žukauskaitė,Lutz Kirste,Katarzyna Holc,Maria Datcheva,Dimitar Stoychev,Vadim Lebedev,Oliver Ambacher,Oliver Ambacher +11 more
TL;DR: In this paper, the intrinsic stress gradient caused by the growing inplane grain size along film thickness was minimized by increasing the N 2 concentration in the Ar/N 2 gas mixture during the growth process.
References
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John A. Thornton,D.W. Hoffman +1 more
TL;DR: In this paper, the fundamental nature of the internal stresses that are found in both evaporated and sputtered coatings is reviewed from the point of view of decorative coating applications, which indicate that apparatus geometry is particularly important in determining the state of stress that forms in deposits.
Journal ArticleDOI
Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications
M.-A. Dubois,Paul Muralt +1 more
TL;DR: In this paper, a thin-film bulk acoustic resonator (TFBAR) with fundamental resonance at 3.6 GHz has been fabricated to assess resonator properties, and the material parameters derived from the thickness resonance were a coupling factor k=0.23 and a sound velocity vs.
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Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
TL;DR: In this article, the basic operation principle for MEMS with wide band gap semiconductors is described, and the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.