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Journal ArticleDOI

Anomalous variation of resistance in bismuth thin films and the effect of substrate temperature

V. Damodara Das, +1 more
- 01 Mar 1981 - 
- Vol. 31, Iss: 3, pp 133-136
TLDR
In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.
About: 
This article is published in Vacuum.The article was published on 1981-03-01. It has received 9 citations till now. The article focuses on the topics: Bismuth & Annealing (metallurgy).

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Citations
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Journal ArticleDOI

Quantum-size effects in n-type bismuth thin films

E.I. Rogacheva, +4 more
- 14 Apr 2003 - 
TL;DR: In this paper, the authors attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.
Journal ArticleDOI

Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness

V. Damodara Das, +1 more
- 01 Sep 1983 - 
TL;DR: In this paper, the electrical resistance of Ag2Te films has been measured as a function of temperature during heating, which was carried out immediately after the film formation, and the observed exponential decrease of resistance with temperature up to the transition point points to the semiconducting nature of the low temperature polymorph of ag2Te.
Journal ArticleDOI

Band gap and intergrain barrier activation energies in Bi90Sb10 thin films

V. Damodara Das, +1 more
- 01 Dec 1981 - 
TL;DR: In this paper, electrical resistivity and Hall effect measurements have been made on vacuum evaporated Bi 90 Sb 10 alloy films of various thickness (350 A to 4500 A), in the temperature range of 77 to 510 K.
Journal ArticleDOI

Lattice distortion energy spectra of as-grown bismuth thin films and their thickness dependence

V. Damodara Das, +1 more
- 01 May 1982 - 
TL;DR: In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.
Journal ArticleDOI

Oscillatory behaviour of resistivity with thickness in bismuth thin films

V. Damodara Das, +1 more
- 01 Jan 1981 - 
TL;DR: In this article, it was shown that resistivity oscillates with thickness both for unannealed and annealed films and that the same kind of oscillatory behaviour with thickness is also observed in the case of defect resistivity.
References
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Journal ArticleDOI

Structure of thermally oxidized bismuth films

Shashi Kant Sharma, +1 more
- 17 Sep 1979 - 
TL;DR: In this paper, the structure of thin films of bismuth (250-600 A) prepared by vacuum evaporation has been studied by electron microscopy and electron diffraction.