Journal ArticleDOI
Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
Yasuto Hijikata,Hiroyuki Yaguchi,Sadafumi Yoshida,Yasutaka Takata,Keisuke Kobayashi,Hiroshi Nohira,Takeo Hattori +6 more
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TLDR
In this article, the properties of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the soft x-ray excited photo-emission spectroscopy (SX-PES) and hard X-ray-excited photo-EMission spectromission spectroglomeration (HXPES), using synchrotron radiation.Abstract:
Wet and dry oxide films-4H-SiC epitaxial (0001¯) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.read more
Citations
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Journal ArticleDOI
Hard X-ray photoemission spectroscopy
TL;DR: A review of the history of X-ray photoemission spectroscopy using high-brilliance high-flux X-rays from third generation synchrotron radiation facilities is presented in this paper.
Journal ArticleDOI
Unified theory of silicon carbide oxidation based on the Si and C emission model
Daisuke Goto,Yasuto Hijikata +1 more
TL;DR: In this paper, the authors established a unified theory of SiC oxidation by reproducing all the SiC oxide growth rates on the (0 0 0 1) Si-face, (1 1 0) a-face and ( 0 0 0 ) C-face at various oxidation temperatures and oxide partial pressures.
Journal ArticleDOI
Growth Rate Enhancement of (0001)-Face Silicon–Carbide Oxidation in Thin Oxide Regime
TL;DR: The thermal oxidation of silicon carbide (SiC) has been studied by performing in-situ ellipsometry as discussed by the authors, and it has been found that the oxidation rates at the oxidation thickness of approximately less than around 20 nm are much larger than those given using the Deal-Grove (D-G) model, suggesting that the time dependence of the oxide thickness cannot be explained using the D-G model, i.e., a simple linear-parabolic model, in the initial oxidation stage.
Journal ArticleDOI
Growth rates of dry thermal oxidation of 4H-silicon carbide
TL;DR: In this paper, a full set of growth rate coefficients to enable high-accuracy two-and three-dimensional simulations of dry thermal oxidation of 4H-silicon carbide was provided.
Journal ArticleDOI
Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar
TL;DR: In this article, carbon-associated byproducts formed at the dry-oxidized SiO2/SiC(0001) interface could be decomposed and emitted on the SiO 2 side by high-purity Ar annealing.
References
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Journal ArticleDOI
Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids
Martin P. Seah,W. A. Dench +1 more
TL;DR: In this paper, a compilation of all published measurements of electron inelastic mean free path lengths in solids for energies in the range 0-10 000 eV above the Fermi level is presented.
Journal ArticleDOI
High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
TL;DR: In this article, high carbon concentrations at distinct regions at thermally-grown SiO2/6H-SiC(0001) interfaces have been detected by electron energy loss spectroscopy (EELS).
Journal ArticleDOI
Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face
TL;DR: In this article, the effect of gate oxidation method on the electrical properties of metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on 4H-SiC C(0001) face has been investigated.