Journal ArticleDOI
Chemical Structures of the SiO2Si Interface
TLDR
In this paper, the authors present the present understanding of chemical structures of SiO2/Si interfaces and initial stage of oxidation of silicon surfaces and discuss the possibility of forming a flat interface by oxidizing an atomically flat silicon surface without introducing structural defects.Abstract:
As a result of considerable progress in microfabrication technology for ultra-large scale integration (ULSI), it has become necessary to control oxide formation on an atomic scale in order to produce defect-free SiO2/Si interfaces. However, the possibility of forming an atomically flat interface by oxidizing an atomically flat silicon surface without introducing structural defects is not yet clarified. In this article the present understanding of chemical structures of SiO2/Si interfaces and initial stage of oxidation of silicon surfaces are reviewed.read more
Citations
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Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
Journal ArticleDOI
Atomic transport during growth of ultrathin dielectrics on silicon
TL;DR: In this article, an atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride films on Si is reviewed and the physico-chemical constitution of the involved surfaces and interfaces for each different dielectric material, as well as complementary studies of the gas, gas-surface, and solid phase chemistry.
Journal ArticleDOI
Hydrogen passivation of germanium (100) surface using wet chemical preparation
TL;DR: In this paper, a wet chemical preparation involving deionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces.
Journal ArticleDOI
Thermal contact resistance across nanoscale silicon dioxide and silicon interface
Jie Chen,Gang Zhang,Baowen Li +2 more
TL;DR: In this paper, the authors systematically studied the interfacial thermal resistance (Kapitza resistance) of a heterojunction composed of amorphous silicon dioxide and crystalline silicon by using molecular dynamics simulations.
Journal ArticleDOI
Oxide-supported metal clusters: models for heterogeneous catalysts
Ashok K. Santra,D. W. Goodman +1 more
TL;DR: In this article, the size-dependent electronic, structural and chemical properties of metal clusters on oxide supports are investigated, and the authors highlight some of the accomplishments and summarizes the challenges that lie ahead.
References
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Journal ArticleDOI
Microscopic structure of the SiO 2 /Si interface
TL;DR: In this paper, the bonding of Si atoms at the SiO2/Si interface was determined via high-resolution core level spectroscopy with synchrotron radiation, and a model of the interface structure was obtained from the density and distribution of intermediate oxidation states.
Journal ArticleDOI
The Evolution of Silicon Wafer Cleaning Technology
TL;DR: In this article, the evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989, from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.