Journal ArticleDOI
Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO.
L. G. Wang,Alex Zunger +1 more
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TLDR
A cluster-doping approach in which a locally stable chemical environment is realized by using few dopant species is suggested, which explains two puzzling experimental observations, i.e., that monodoping N in ZnO via N2 fails to produce p-type behavior, whereas using an NO source produces metastable p- type behavior, which disappears over time.Abstract:
First-principles calculations on p-type doping of the paradigm wide-gap ZnO semiconductor reveal that successful doping depends much on engineering a stable local chemical bonding environment. We suggest a cluster-doping approach in which a locally stable chemical environment is realized by using few dopant species. We explain two puzzling experimental observations, i.e., that monodoping N in ZnO via N2 fails to produce p-type behavior, whereas using an NO source produces metastable p-type behavior, which disappears over time.read more
Citations
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Journal ArticleDOI
P‐type doping and devices based on ZnO
TL;DR: In this article, an n-type ZnO and p-type AlGaN were used for homojunction light-emitting diodes (LEDs) and laser Diodes.
Journal ArticleDOI
The Future Of ZnO Light Emitters
TL;DR: In this paper, a p-ZnO/p-AlGaN/n-SiC structure is proposed to produce a high-energy p-n homojunction.
Journal ArticleDOI
Overcoming the doping bottleneck in semiconductors
TL;DR: In this paper, the authors have studied the chemical trends of defect formation and ionization in semiconductors to understand the physical origin of the doping difficulty, and discussed some of the computational issues in defect calculations.
Journal ArticleDOI
Transparent Conducting Oxides—An Up-To-Date Overview
TL;DR: As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences.
Journal ArticleDOI
On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide
TL;DR: The behavior of nitrogen in ZnO thin films grown by high-vacuum plasma-assisted chemical vapor deposition is examined in this paper, where it is observed that hole conduction decreases and films revert to n-type conductivity in a period of several days.
References
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Journal ArticleDOI
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
Georg Kresse,Jürgen Furthmüller +1 more
TL;DR: A detailed description and comparison of algorithms for performing ab-initio quantum-mechanical calculations using pseudopotentials and a plane-wave basis set is presented in this article. But this is not a comparison of our algorithm with the one presented in this paper.
Journal ArticleDOI
Hydrogen as a cause of doping in zinc oxide
Van de Walle,G Chris +1 more
TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
Book
Inorganic Chemistry: Principles of Structure and Reactivity
TL;DR: In this article, inorganic chemistry principles of structure and reactivity are presented. But, they do not cover how to use these principles in the design of products, and they are not available in any type of product.
Journal ArticleDOI
Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
TL;DR: In this paper, the authors study the intrinsic defect physics of ZnO and find that ZnOs cannot be doped p type via native defects, despite the fact that they are shallow donors.
Journal ArticleDOI
First-principles study of native point defects in ZnO
TL;DR: In this paper, the first principles pseudopotential method was used to determine the electronic structure, atomic geometry, and formation energy of native point defects in ZnO and showed that both the Zn and O vacancies are the relevant defects.