Journal ArticleDOI
Current injection efficiency of InGaAsN quantum-well lasers
Nelson Tansu,Luke J. Mawst +1 more
Reads0
Chats0
TLDR
In this paper, the concept of below threshold and above threshold current injection efficiency of quantum well (QW) lasers is clarified and the analysis presented in this paper is applied to both the 1200nm and 1300nm emitting InGaAsN QW lasers.Abstract:
The concept of below-threshold and above-threshold current injection efficiency of quantum well (QW) lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200nm emitting InGaAs and 1300nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity. The current injection efficiency of QW lasers with large monomolecular recombination processes is shown to be less temperature sensitive. Excellent agreement between theory and experiment is obtained for both the 1200nm emitting InGaAs QW and the 1300nm emitting InGaAsN QW lasers. Suppression of thermionic carrier escape processes in the InGaAsN QW results in high performance 1300nm emitting lasers operating up to high temperature.read more
Citations
More filters
Journal ArticleDOI
Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
TL;DR: In this article, a strain-compensated InGaN-AlGaN quantum well (QW) structure consisting of thin tensile-strained AlGaN barriers surrounding the QW was investigated as improved active regions for lasers and light emitting diodes.
Journal ArticleDOI
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
TL;DR: In this paper, a self-consistent 6-band k ǫ p method is used to calculate the band structure for InGaN single quantum well (QW) based light-emitting diodes (LEDs).
Journal ArticleDOI
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
TL;DR: In this paper, a self-consistent 6-band k ·p method is used to calculate the band structure for InGaN QW structure and the analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier systems.
Journal ArticleDOI
III-Nitride Photonics
TL;DR: The progress in III-Nitride photonics research in 2009 is reviewed in this article, where several new research areas related to terahertz photonics, intersubband quantum wells, nanostructures, and other devices are discussed.
Journal ArticleDOI
Band engineering in dilute nitride and bismide semiconductor lasers
Christopher A. Broderick,Christopher A. Broderick,Muhammad Usman,Stephen J. Sweeney,Eoin P. O'Reilly,Eoin P. O'Reilly +5 more
TL;DR: In this article, the effects of spin-orbit-splitting energy on the dominant Auger recombination loss mechanism were investigated for high-mismatched semiconductor alloys such as GaInNAs and GaBiAs.
References
More filters
Book
Quantum well lasers
TL;DR: In this article, the origin of Quantum Wells and the Quantum Well Laser is discussed and the effect of intrinsic relaxation on optical spectra is discussed, as well as the properties of Quantum Well Lasers.
Journal ArticleDOI
High speed quantum-well lasers and carrier transport effects
TL;DR: In this article, the authors developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include carrier transport effects on the high-speed properties of quantum-well lasers.