Journal ArticleDOI
Determination of the mechanical properties of r.f.-magnetron-sputtered zinc oxide thin films on substrates
Min-Yung Han,Jwo-Huei Jou +1 more
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In this article, the variation of stress with respect to temperature in ZnO films, prepared by r.f. magnetron sputtering on Si and GaAs substrates, has been studied by using a bending beam technique.About:
This article is published in Thin Solid Films.The article was published on 1995-05-01. It has received 54 citations till now. The article focuses on the topics: Sputter deposition & Thermal expansion.read more
Citations
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Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices
Heung Soo Kim,Alberto Piqué,James S. Horwitz,Hideyuki Murata,Zakya H. Kafafi,Charles M. Gilmore,Douglas B. Chrisey +6 more
TL;DR: In this article, the structural, electrical and optical properties of transparent conducting aluminum-doped zinc oxide (AZO) thin films have been investigated as a function of Al-doping amount (0 − 4 wt%) in the target.
Journal ArticleDOI
Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition
TL;DR: In this paper, the structural, electrical and optical properties of a single-crystal aluminum-doped zinc oxide (AZO) film were investigated as a function of substrate deposition temperature and background gas pressure.
Journal ArticleDOI
Properties of RF magnetron sputtered zinc oxide thin films
TL;DR: In this article, a systematic study of the influence of oxygen concentration and the RF power on the structural properties of ZnO thin films was made, which exhibited a c-axis orientation of below 0.32° FWHM of X-ray rocking curves, an extremely high resistivity of 10 12 ǫ cm and an energy gap of 3.3 eV at room temperature.
Journal ArticleDOI
Structural properties of zinc oxide thin films prepared by r.f. magnetron sputtering
TL;DR: In this article, the influence of substrate temperature on the film structural properties was investigated and it was found that a substrate temperature of 100°C and target/substrate distance about 50 mm, very low gas pressures of 3.35×10−3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.
References
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Journal ArticleDOI
Mechanical properties of thin films
TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI
Stress-related effects in thin films
John A. Thornton,D.W. Hoffman +1 more
TL;DR: In this paper, the fundamental nature of the internal stresses that are found in both evaporated and sputtered coatings is reviewed from the point of view of decorative coating applications, which indicate that apparatus geometry is particularly important in determining the state of stress that forms in deposits.
Journal ArticleDOI
Thermal expansion of some diamondlike crystals
Glen A. Slack,S. F. Bartram +1 more
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Journal ArticleDOI
Intrinsic stress in sputtered thin films
TL;DR: In this article, a review of the literature reveals that the intrinsic stress in sputtered thin films can be tensile or compressive depending on the flux and energy of particles striking the film.
Journal ArticleDOI
Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films
T.F. Retajczyk,A.K. Sinha +1 more
TL;DR: In this paper, the elestic stiffness parameter E f (1−ν f ) and the thermal expansion coefficient αf were obtained for four different silicides (TiSi2, TaSi2 and MoSi2) and for two different nitrides (chemically vapor-deposited Nitrox Si3N4 and r.f. plasma SiN) from stress-temperature measurements on identical films deposited on two different substrate materials.
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