Journal ArticleDOI
Development of a new heterojunction structure (ACJ ‐HIT) and its application to polycrystalline silicon solar cells
Makoto Tanaka,Mikio Taguchi,Tsuysohi Takahama,Toru Sawada,Shigeru Kuroda,Takao Matsuyama,Shinya Tsuda,Akio Takeoka,Shoichi Nakano,Hiroshi Hanafusa,Yukinori Kuwano +10 more
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In this paper, a new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology.Abstract:
A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non-doped a-Si thin layer was inserted between the p(a-Si)/n(c-Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation.read more
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Journal ArticleDOI
Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies
TL;DR: In this article, the theoretical background and the two prominent technologies for passivating contacts are presented and discussed, and two most promising material candidates for the top cell, i.e., III/V and perovskites, are discussed.
Book ChapterDOI
Crystalline Silicon Solar Cells
TL;DR: Most silicon cells have been fabricated using thin wafers cut from large cylindrical monocrystalline ingots prepared by the exacting Czochralski (CZ) crystal growth process and doped to about one part per million with boron during ingot growth as mentioned in this paper.
Journal ArticleDOI
Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells
Zhang Zhi,Yuheng Zeng,Chun-Sheng Jiang,Yuqing Huang,Mingdun Liao,Tong Hui,Mowafak Al-Jassim,Pingqi Gao,Chunhui Shou,Xiaoling Zhou,Baojie Yan,Jichun Ye +11 more
TL;DR: In this paper, the carrier transport through the silicon-oxide (SiOx) layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells has been studied experimentally and by simulation.
Patent
Photovoltaic cell and method for fabrication of said cell
TL;DR: The photovoltaic cell has a high efficiency for a low fabrication cost and is used in solar cells as discussed by the authors, where a semiconductor substrate, a front passivation layer arranged on the substrate, an emitter consisting of a layer having a first conductivity (p or n), a front transparent conductive layer (15), a rear passivated layer (17) deposited on the whole rear surface of the substrate and maintained on all of said surface, a back layer (18) producing a surface field having a second conductivities (n or p) opposite to said first
Journal ArticleDOI
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
Malte Köhler,Malte Köhler,Manuel Pomaska,Paul Procel,Rudi Santbergen,A. O. Zamchiy,Bart Macco,Andreas Lambertz,Weiyuan Duan,Pengfei Cao,Benjamin Klingebiel,Shenghao Li,Alexander Eberst,Alexander Eberst,Martina Luysberg,Kaifu Qiu,Kaifu Qiu,Olindo Isabella,Friedhelm Finger,Thomas Kirchartz,Thomas Kirchartz,Uwe Rau,Uwe Rau,Kaining Ding +23 more
TL;DR: Kohler et al. as mentioned in this paper proposed a passivating contact based on a double layer of nanocrystalline silicon carbide that overcomes the trade-offs of conductivity, defect passivation and optical transparency.
References
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Journal ArticleDOI
Comparative study of time‐resolved conductivity measurements in hydrogenated amorphous silicon
TL;DR: In this article, it was shown that photoconductivity transients in aSi:H measured in a coplanar electrode configuration and by microwave reflection are identical and that transients obtained with these techniques reflect free charge carrier kinetics where the influence of contacts can be neglected.