Journal ArticleDOI
Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor
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TLDR
In this paper, the effect of nitrogen flow rate during sputtering on the performances of tin silicon oxide (TSO) thin film transistors (TFTs) through comparing to the TFTs with different oxygen flow rates.Abstract:
We investigated the effect of nitrogen flow rate during the sputtering on the performances of tin silicon oxide (TSO) thin film transistors (TFTs) through comparing to the TFTs with different oxygen flow rates. Increasing nitrogen flow rate as well as oxygen flow rate can reduce the carrier concentration and shift turn on voltage to the positive direction, indicating that nitrogen can be a good carrier suppressor of the TSO channel layer. The oxygen vacancies can be filled with nitrogen atoms resulting in less electron donors. Correspondingly, the mobility decreases due to the percolation conduction model. Besides, the TSO channel layer is amorphous regardless of nitrogen flow rate, which is important to ensure uniformity of oxide TFTs.read more
Citations
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Spray-Pyrolyzed High-k Zirconium-Aluminum-Oxide Dielectric for High Performance Metal-Oxide Thin-Film Transistors for Low Power Displays
Mobaidul Islam,Jewel Kumer Saha,Md. Mehedi Hasan,Junyeong Kim,Ravindra Naik Bukke,Arqum Ali,Jin Jang +6 more
Journal Article
Ultrafine ZnS Nanobelts as Field Emitters
Xiaosheng Fang,Yoshio Bando,Guozhen Shen,Changhui Ye,Ujjal K. Gautam,Pedro M. F. J. Costa,Chunyi Zhi,Chengchun Tang,Dmitri Golberg +8 more
TL;DR: In this article, the authors describe the synthesis of ultrafine ZnS nanobelts by controlling evaporation and agglomeration rates, and show that the resulting nanobels are very sensitive to an electron beam.
Journal ArticleDOI
Integration of bandgap-engineered double-stacked channel layers with nitrogen doping for high-performance InGaO TFTs
TL;DR: In this paper, a double-stacked channel layer (DSCL) was used for bandgap narrowing in indium-gallium oxide (IGO) thin film transistors.
Journal ArticleDOI
Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
Honglong Ning,Xianzhe Liu,Zhang Hongke,Zhiqiang Fang,Wei Cai,Chen Jianqiu,Rihui Yao,Miao Xu,Lei Wang,Linfeng Lan,Junbiao Peng,Xiaofeng Wang,Zichen Zhang +12 more
TL;DR: The good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C, which includes a value of saturation mobility that can be reached at 6.7 cm2/Vs and a ratio of Ion/Ioff as 7.34 × 107.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Journal ArticleDOI
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
TL;DR: In this article, a chemical design concept of ionic amorphous oxide semiconductor (IAOS) and its unique electron transport properties, and electronic structure, by comparing them with those of conventional ammorphous semiconductors is addressed.
Journal ArticleDOI
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A. Suresh,John F. Muth +1 more
TL;DR: In this paper, the effects of bias stress on transistor performance were investigated for thin-film transistors and it was shown that the threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.