Journal ArticleDOI
Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
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In this article, an InGaN∕GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaNs quantum well thicknesses are fabricated and characterized.Abstract:
InGaN∕GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, relative internal quantum efficiency (IQE) measurements indicate that a thinner well results to higher IQEs owing to the greater spatial overlap of electron and hole distribution functions.read more
Citations
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High-Power and High-Efficiency InGaN-Based Light Emitters
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Thermal boundary resistance predictions from molecular dynamics simulations and theoretical calculations
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References
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Journal ArticleDOI
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
Michael R. Krames,O.B. Shchekin,Regina B. Mueller-Mach,Gerd O. Mueller,Ling Zhou,Gerard Harbers,M. G. Craford +6 more
TL;DR: In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Journal ArticleDOI
High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
TL;DR: In this paper, high-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.
Journal ArticleDOI
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
TL;DR: In this paper, a phase separation of the InGaN layer was clearly observed in the emission spectra, in which blue and red emission peaks appeared, in terms of the temperature dependence of the LEDs.
Journal ArticleDOI
High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
Mathew C. Schmidt,Kwang-Choong Kim,Hitoshi Sato,Natalie N. Fellows,Hisashi Masui,Shuji Nakamura,Steven P. DenBaars,James S. Speck +7 more
TL;DR: In this article, high power and high efficiency nonpolar m-plane (1100) light emitting diodes (LEDs) have been fabricated on low extended defect bulk mplane GaN substrates.
Journal ArticleDOI
GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
Jong Kyu Kim,Thomas Gessmann,E. Fred Schubert,J.-Q. Xi,Hong Luo,Jaehee Cho,Cheolsoo Sone,Yongjo Park +7 more
TL;DR: In this paper, a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive index layer, and an Ag layer is presented.