Journal ArticleDOI
Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperatures
V. Damodara Das,N. Meena +1 more
TLDR
In this paper, Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K.Abstract:
Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K. The observed resistance against temperature behaviour of the films, and the effect of thickness and substrate temperature during deposition of the films, has been explained by considering that these films behave as semiconductors; the overlap between valence and conduction bands being removed due to the presence of antimony, the influence of a quantum size effect and the fact that the grain size of the films formed is a function of thickness and substrate temperature.read more
Citations
More filters
Journal ArticleDOI
Thickness dependence of electrical resistivity and activation energy in AgSbTe2 thin films
D. Lakshminarayana,R. R. Desai +1 more
TL;DR: In this article, thin films of AgSbTe2 with different thicknesses were prepared by thermal evaporation on glass substrates held at room temperature and the films were all found to be semiconducting in nature.
Journal ArticleDOI
Electrodeposition of Bi-Sb Alloy Using Cu electrodes
Masato Ohmukai,Akira Tsuyoshi +1 more
TL;DR: In this article, an x-ray diffractometer and an electron probe micro-analysis were used to find no trace of Cu in the obtained alloys and it was concluded that Cu electrodes can be used for the deposition of Bi-Sb alloys, which results in an advantage of availability of the electrode.
Proceedings ArticleDOI
Effect of operating temperature on performance of obliquely deposited Bi, Sb, and Bi-Sb semimetal thin film laser detectors
TL;DR: In this article, the authors studied the structural properties of Bi, Sb, and Bi-Sb alloy thin films and found that the maximum responsivity for these detectors can be obtained at 75/spl deg/C and the dependence of responsivity on the width of detectors was investigated.
Journal ArticleDOI
Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure
TL;DR: The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process and the absorption of Bi-Sb thin film structure was improved to reach 97% at near-infrared region.
Journal ArticleDOI
Ultimate figures of merit broadband self-powered obliquely deposited antimony thin film laser detectors
TL;DR: In this article , a study of the figures of merit antimony thin films detector grown by oblique angle deposition technique is presented, and a wideband (0.649-10.6) µm self-powered laser detectors; operating at room temperature.
References
More filters
Journal ArticleDOI
Annealing and thickness effects on the electrical resistance of vacuum-deposited tin antimonide alloy films
V. Damodara Das,M.S. Jagadeesh +1 more
TL;DR: In this article, the initial lattice distortion energy spectra of the films have been determined from the resistance-temperature data, and it is found that the resistivity values for films of different thicknesses are in good agreement with the size effect theory.
Journal ArticleDOI
Quantum size effect in films and new methods for investigating the band structure of solids
V.N. Lutskii,T. N. Pinsker +1 more
TL;DR: In this paper, the locations of the extrema of the size subbands and of the Tamm surface states are calculated as functions of the film thickness and a new length R is introduced which characterizes the crystal surface properties.
Journal ArticleDOI
Defect density variation with deposition rate in snsb thin films from annealing study of electrical resistance
V. Damodara Das,M.S. Jagadeesh +1 more
TL;DR: In this paper, the initial lattice distortion energy spectra of SnSb thin films of the same thickness (600 A) vacuum deposited at room temperature on glass substrates at various deposition rates were heated to a maximum temperature of about 300°C and the changes in the electrical resistance with temperature were recorded.
Journal ArticleDOI
Semiconducting behavior in antimony-doped bismuth films
V. Damodara Das,M.S. Jagadeesh +1 more
TL;DR: In this article, the electric resistivity and Hall effect were studied for the vacuum evaporated and annealed ∠1 at.% Sb-doped bismuth alloy films of various thickness (350-3500 A) in the temperature range of 77-510 K.
Journal ArticleDOI
Anomalous variation of resistance in bismuth thin films and the effect of substrate temperature
V. Damodara Das,N. Jayaprakash +1 more
TL;DR: In this paper, the resistance of bismuth thin films of thickness 720 A have been vacuum deposited at various substrate temperatures on glass substrates and their resistances are recorded as a function of temperature after annealing the films at 200°C.