Journal ArticleDOI
Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics
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TLDR
In this paper, a high-mobility graphene field effect transistor with embedded gate was fabricated on smooth spin-coated polyimide films, achieving a maximum electron and hole mobility of 4930 cm2/VAbstract:
A high-mobility graphene field-effect transistor with embedded gate was fabricated on smooth spin-coated polyimide films. Electrostatic transport measurements reveal a maximum electron and hole mobility of 4930 cm2/V s and 1130 cm2/V s, respectively. Temperature dependent measurements indicate that carrier transport is not limited by intrinsic mechanisms but by charged impurities, surface roughness, and defects, suggesting that further increases in mobility are possible. The measured carrier mobilities are the highest reported for graphene transistors on polymeric substrates and hence enable high-speed devices for flexible electronics from graphene grown by size-scalable chemical vapor deposition.read more
Citations
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Journal ArticleDOI
Graphene-Based Flexible and Stretchable Electronics
TL;DR: The production and fabrication methods used for target device applications, including logic devices, energy-harvesting devices, sensors, and bioinspired devices, and the various types of flexible and stretchable electronic devices enabled by graphene are discussed.
Journal ArticleDOI
Graphene Transistors: Status, Prospects, and Problems
TL;DR: The properties of graphene relevant for electronic applications are discussed, its advantages and problems are examined, and the state of the art of graphene transistors are summarized.
PatentDOI
Transparent, flexible, low-noise graphene electrodes for simultaneous electrophysiology and neuro-imaging
TL;DR: A transparent, flexible neural electrode technology based on graphene is reported, which enables simultaneous optical imaging and electrophysiological recording and may pave the way for high spatio-temporal resolution electro-optic mapping of the dynamic neuronal activity.
Journal ArticleDOI
Enhancement of the Electrical Properties of Graphene Grown by Chemical Vapor Deposition via Controlling the Effects of Polymer Residue
Ji Won Suk,Wi Hyoung Lee,Wi Hyoung Lee,Jongho Lee,Harry Chou,Richard D. Piner,Yufeng Hao,Deji Akinwande,Rodney S. Ruoff +8 more
TL;DR: This work provides a route to enhancing the electrical properties of CVD-grown graphene even when it has a thin polymer coating, thanks to electron donation to graphene by the -NH2 functional group in formamide that is absorbed in the polymer residue.
Journal ArticleDOI
Electrochemical approaches to the production of graphene flakes and their potential applications
Chee Tong John Low,Frank C. Walsh,M.H. Chakrabarti,M.H. Chakrabarti,Mohd Ali Hashim,Mohd Azlan Hussain +5 more
TL;DR: In this article, the state-of-the-art methods reported in the literature regarding electrochemical synthesis of graphite flakes as well as their properties are discussed, followed by a discussion on the applications of electrochemically prepared GN flakes.
References
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Journal ArticleDOI
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
Journal ArticleDOI
Transfer of large-area graphene films for high-performance transparent conductive electrodes
Xuesong Li,Yanwu Zhu,Weiwei Cai,Mark D. Borysiak,Boyang Han,David Chen,Richard D. Piner,Luigi Colombo,Rodney S. Ruoff +8 more
TL;DR: An improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition is reported on, finding that the transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications.
Journal ArticleDOI
Intrinsic and extrinsic performance limits of graphene devices on SiO2.
TL;DR: It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.
Journal ArticleDOI
Doping graphene with metal contacts.
Gianluca Giovannetti,Gianluca Giovannetti,Petr Khomyakov,Geert Brocks,Volodymyr Karpan,J.E. van den Brink,J.E. van den Brink,Paul J. Kelly +7 more
TL;DR: In this article, the authors use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au, and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by 0:5 eV.
Journal ArticleDOI
Field and thermionic-field emission in Schottky barriers
F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.