Journal ArticleDOI
Ensemble Monte Carlo study of electron transport in wurtzite InN
TLDR
In this paper, the first five conduction bands derived from the pseudopotential method and a numerically calculated impact ionization transition rate using a wave-vector-dependent dielectric function were studied using an ensemble Monte Carlo method.Abstract:
Electronic transport in wurtzite phase InN is studied using an ensemble Monte Carlo method. The model includes the full details of the first five conduction bands derived from the pseudopotential method and a numerically calculated impact ionization transition rate using a wave-vector- dependent dielectric function. Calculated results for electron transport at both low and high electric field are presented and compared with available results from simpler methods. The dependence of the relevant transport properties on the parameters is discussed, in particular in regards to the uncertainties in the band structure and coupling constants. It is found that at a field of 65 kV/cm that the peak electron drift velocity is 4.2×107 cm/s. The peak velocity in InN is substantially higher than in GaN. The velocity field curve presents a noticeable anisotropy with respect to field direction. The peak velocity decreases to 3.4×107 cm/s for a field of 70 kV/cm in the direction perpendicular to the basal plane. The elect...read more
Citations
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Journal ArticleDOI
Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
Journal ArticleDOI
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
TL;DR: In this article, the effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy (MBE) is studied, and it is shown that using an N buffer layer can significantly improve the structural and electrical properties of InNs.
Journal ArticleDOI
Low-field electron mobility in wurtzite InN
Vladimir Polyakov,Frank Schwierz +1 more
TL;DR: In this paper, low-field electron mobility in bulk wurtzite InN at room temperature and over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) method is reported.
Journal ArticleDOI
Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
TL;DR: In this article, the electron transport of III-V nitride semiconductors, including gallium nitride, aluminum nitride and indium oxide, has been extensively studied.
References
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Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Book
Quantum Processes in Semiconductors
TL;DR: In this paper, the energy and momentum conservation of phonon-impurity coupling in the diamond lattice is discussed. But the authors do not consider the effect of photo-ionization on photo-deionization of a hydrogenic acceptor.
Journal ArticleDOI
Optimum semiconductors for high-power electronics
TL;DR: In this article, the peak electric field strength at avalanche breakdown was used as a critical material parameter for evaluating the quality of a semiconducting material for high-power electronics, and it was shown that SiC and diamond could offer significant advantages compared to either silicon or group III-V compound semiconductors for these applications.
Journal ArticleDOI
Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
TL;DR: In this article, Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, AlP, InAs, GaP) and some of their alloys were performed at two lattice temperatures (77 and 300 K).
Journal ArticleDOI
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
TL;DR: In this article, the first successful P-GaN/n-InGaN+GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time.