Journal ArticleDOI
Estimation of the thermal band gap of a semiconductor from Seebeck measurements
H. J. Goldsmid,Jeffrey Sharp +1 more
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TLDR
In this article, it was shown that the Seebeck coefficient of a semiconductor has a maximum value that is close to one-half the energy gap divided by eT, with account taken of the mobility and effective mass ratios.Abstract:
It is shown that the magnitude of the Seebeck coefficient of a semiconductor has a maximum value that is close to one-half the energy gap divided by eT. An expression for the position of the Fermi level at which the Seebeck coefficient has a maximum or minimum value is derived, with account taken of the mobility and effective mass ratios. It is concluded that measurement of the Seebeck coefficient as a function of temperature on any novel semiconductor is one of the simplest ways of estimating its band gap.read more
Citations
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CsBi4Te6: A High-Performance Thermoelectric Material for Low-Temperature Applications
Duck Young Chung,Timothy P. Hogan,Paul Brazis,Melissa Rocci-Lane,Carl R. Kannewurf,Marina Bastea,Ctirad Uher,Mercouri G. Kanatzidis +7 more
TL;DR: The material CsBi(4)Te(6) has been synthesized and its properties have been studied, and at cryogenic temperatures, the thermoelectric properties appear to match or exceed those of Bi(2-x)Sb(x)Te (3-y)Se(y) alloys.
Journal ArticleDOI
Yb14MnSb11: New High Efficiency Thermoelectric Material for Power Generation
TL;DR: In this article, the complex Zintl compound, Yb14MnSb11, was proposed for high-temperature (>900 K), p-type materials development for thermoelectric power generation.
Journal ArticleDOI
High Thermoelectric Performance of p-Type SnTe via a Synergistic Band Engineering and Nanostructuring Approach
Gangjian Tan,Li-Dong Zhao,Fengyuan Shi,Jeff W. Doak,Shih Han Lo,Hui Sun,Chris Wolverton,Vinayak P. Dravid,Ctirad Uher,Mercouri G. Kanatzidis +9 more
TL;DR: It is shown that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density, and alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance.
Journal ArticleDOI
Thermoelectric properties of p-type polycrystalline SnSe doped with Ag
TL;DR: In this paper, the p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing, has been studied and shown to have anisotropic properties with hysteresis observed in resistivity between 300 and 650 K.
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Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe
TL;DR: PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe, but these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe.
References
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Journal ArticleDOI
The Thermoelectric Figure of Merit and its Relation to Thermoelectric Generators
R. P. Chasmar,R. Stratton +1 more
TL;DR: In this paper, the expression for the figure of merit of a semi-conductor of given carrier mobility and lattice thermal conductivity expressed in terms of generalized Fermi-Dirae functions has been numerically evaluated for various scattering indices.
Journal ArticleDOI
Figure of merit for thermoelectrics
TL;DR: Theoretical calculations for the figure of merit Z in thermoelectrics are presented in this article, where the maximum values of Z are obtained in semiconductors which are doped so that the chemical potential is near the band edge.