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Journal ArticleDOI

Ferromagnetism in metal oxide systems: interfaces, dopants, and defects

TLDR
A review of the developments in this field by late 2011 and 2012 can be found in this paper, where a number of techniques are applied to bring out materials issues that are critical to the precise understanding of the origin of magnetism in certain cases.
Abstract
Ferromagnetism in metal oxide systems has always attracted scientific attention in view of the intriguing and interesting interplay of spin, charge, orbital and lattice degrees of freedom that such systems display. This trend appears to be continuing with enhanced focus on interface systems, multiferroics, diluted magnetic semiconducting oxides (DMSOs) and nanomaterial magnetism. Newer techniques are being applied to bring out materials issues that are critical to the precise understanding of the origin of magnetism in certain cases. Interest is also beginning to grow in exploring application potential of some such systems. In this article we review the developments in this field by late 2011 and 2012.

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Citations
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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.
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Negative permittivity behavior and magnetic performance of perovskite La1−xSrxMnO3 at high-frequency

TL;DR: In this article, an interesting negative permittivity behavior of single-phase perovskite La1−xSrxMnO3 (LSMO) was found, where the LSMO bulks with an x value of 0.2 or 0.5 were prepared by a solgel/sintering process.
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Investigating thermal stability of structural defects and its effect on d0 ferromagnetism in undoped SnO2

TL;DR: In this paper, the effect of annealing on structural defects and d(0) ferromagnetism in SnO2 nanoparticles prepared by solution combustion method is investigated.
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Effect of structural defects, surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique

TL;DR: In this article, the gas sensing properties of Al-doped ZnO thin films have been reported where the nanocrystalline znO based thin films were well deposited by a simple and inexpensive chemical spray pyrolysis (CSP) technique.
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Investigation of the physical properties of Fe:TiO2-diluted magnetic semiconductor nanoparticles

TL;DR: The structural, optical, magnetic, and electrical properties of sol-gel-derived Ti1−xFexO2 (0.00 ≤ x ≤ 0.05) nanoparticles were investigated in this paper.
References
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Journal ArticleDOI

Upper limit to magnetism in LaAlO3/SrTiO3 heterostructures.

TL;DR: Using polarized neutron reflectometry, the neutron spin-dependent reflectivity from four LaAlO( 3)/SrTiO(3) superlattices is measured and the results imply that the upper limit for the magnetization averaged over the lateral dimensions of the sample induced by an 11 T magnetic field at 1.7 K is less than 2 G.
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Exchange-bias effect at La 0.75 Sr 0.25 MnO 3 /LaNiO 3 interfaces

TL;DR: In this paper, it was shown that the oxidation state of the Ni and Mn cations changes from Mn{}^{3+}$-Ni${}^{ 3+}+++$ to Mn${}−4+}-Ni−2+$ in the layers close to the interface probed by x-ray absorption spectroscopy measurements.
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Interaction of inorganic nanoparticles with graphene.

TL;DR: The findings suggest that changes in magnetization as well as the Raman shifts are directly linked to charge transfer between the deposited nanoparticles and graphene.
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Evidence of superparamagnetic co clusters in pulsed laser deposition-grown Zn0.9Co0.1O thin films using atom probe tomography.

TL;DR: These analyses provide strong evidence that the room-temperature ferromagnetism observed in the magnetization curves cannot be attributed to the observed Co clusters, and reinforce the assumption of a defect-induced ferromagnetic relaxation in Co-doped ZnO diluted magnetic semiconductors.