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Journal ArticleDOI

Ferromagnetism in metal oxide systems: interfaces, dopants, and defects

TLDR
A review of the developments in this field by late 2011 and 2012 can be found in this paper, where a number of techniques are applied to bring out materials issues that are critical to the precise understanding of the origin of magnetism in certain cases.
Abstract
Ferromagnetism in metal oxide systems has always attracted scientific attention in view of the intriguing and interesting interplay of spin, charge, orbital and lattice degrees of freedom that such systems display. This trend appears to be continuing with enhanced focus on interface systems, multiferroics, diluted magnetic semiconducting oxides (DMSOs) and nanomaterial magnetism. Newer techniques are being applied to bring out materials issues that are critical to the precise understanding of the origin of magnetism in certain cases. Interest is also beginning to grow in exploring application potential of some such systems. In this article we review the developments in this field by late 2011 and 2012.

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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.
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Negative permittivity behavior and magnetic performance of perovskite La1−xSrxMnO3 at high-frequency

TL;DR: In this article, an interesting negative permittivity behavior of single-phase perovskite La1−xSrxMnO3 (LSMO) was found, where the LSMO bulks with an x value of 0.2 or 0.5 were prepared by a solgel/sintering process.
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Investigating thermal stability of structural defects and its effect on d0 ferromagnetism in undoped SnO2

TL;DR: In this paper, the effect of annealing on structural defects and d(0) ferromagnetism in SnO2 nanoparticles prepared by solution combustion method is investigated.
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Effect of structural defects, surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique

TL;DR: In this article, the gas sensing properties of Al-doped ZnO thin films have been reported where the nanocrystalline znO based thin films were well deposited by a simple and inexpensive chemical spray pyrolysis (CSP) technique.
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Investigation of the physical properties of Fe:TiO2-diluted magnetic semiconductor nanoparticles

TL;DR: The structural, optical, magnetic, and electrical properties of sol-gel-derived Ti1−xFexO2 (0.00 ≤ x ≤ 0.05) nanoparticles were investigated in this paper.
References
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Journal ArticleDOI

Polaronic transport and magnetism in Ag-doped ZnO

TL;DR: In this article, the experimental evidence supporting polaronic magnetism and transport in Ag-doped ZnO was reported, and the observed weak ferromagnetism and its temperature dependence were explained using the percolation-based model of partially ordered bound magnetic polarons.
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Magnetoresistance of two-dimensional and three-dimensional electron gas in LaAlO 3 /SrTiO 3 heterostructures: Influence of magnetic ordering, interface scattering, and dimensionality

TL;DR: In this article, the magnetic anisotropic properties of quasi-2D electron gas were compared between samples prepared in high-oxygen partial-pressure (HOP) and quasi-two-dimensional (Q2D) conditions.
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Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport

TL;DR: In this article, the electrical and magnetic properties of low-energy H-implanted ZnO single crystals with hydrogen concentrations up to 3 at% in the first 20nm surface layer between 10 K and 300 K were investigated.
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Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate

TL;DR: In this paper, the magnetism of Co-doped ZnO films was investigated and the origin of the observed ferromagnetism was not carrier induced, as confirmed by electric-field effect measurements.