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Journal ArticleDOI

Field failure mechanism study of solder interconnection for crystalline silicon photovoltaic module

Jaeseong Jeong, +2 more
- 01 Sep 2012 - 
- Vol. 52, Iss: 9, pp 2326-2330
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TLDR
The failure mechanism of solder interconnection for c-Si PV Module is proved and water-jet techniques for cross-section and SEM are used to analyze the factor of resistance change and efficiency degradation.
About
This article is published in Microelectronics Reliability.The article was published on 2012-09-01. It has received 63 citations till now. The article focuses on the topics: Soldering.

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Citations
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Journal ArticleDOI

A review of interconnection technologies for improved crystalline silicon solar cell photovoltaic module assembly

TL;DR: In this article, the authors present the characteristics of interconnect contacts in conventional cells and other unconventional crystalline silicon cells and present a comparison of their concept, cell type, joint type, manufacturing techniques and production status.
Journal ArticleDOI

Progress in Materials, Solution Processes, and Long-Term Stability for Large-Area Organic Photovoltaics.

TL;DR: An overview of recent advancements in materials and processing technologies is provided for transitioning from small-area laboratory-scale devices to large-area industrial scale modules and morphology control using various coating techniques in a large active area is discussed.
Journal ArticleDOI

Review of degradation and failure phenomena in photovoltaic modules

TL;DR: In this paper , the degradation of photovoltaic (PV) systems is one of the key factors to address in order to reduce the cost of the electricity produced by increasing the operational lifetime of PV systems.
Journal ArticleDOI

A review of photovoltaic module technologies for increased performance in tropical climate

TL;DR: In this paper, the authors proposed a PVM comprising CdTe cell, back contacts and back-to-back interconnection technologies as the technology with latent capacity to produce improved performance in tropical climates.
Journal ArticleDOI

Manufacturing metrology for c-Si module reliability and durability Part III: Module manufacturing

TL;DR: In this paper, a literature review of relevant measurement techniques aimed at reducing or eliminating the probability of such failures occurring is presented along with an assessment of potential gaps wherein the PV community could benefit from new research and demonstration efforts.
References
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Proceedings ArticleDOI

Commonly observed degradation in field-aged photovoltaic modules

TL;DR: In this paper, the authors define observed degradation in field-aged photovoltaic modules, including degradation of packaging materials, adhesional loss, degradation of interconnects, degradation due to moisture intrusion, and semiconductor device degradation, and suggest that the onset and progression of degradation need to be studied to gain a more comprehensive understanding of module degradation rates and module failures.
Journal ArticleDOI

Photovoltaic module performance and durability following long‐term field exposure

TL;DR: Diagnostic test procedures, results, and implications of in-depth investigations of the performance and durability characteristics of commercial modules after long-term field exposure of photovoltaic modules are summarized.
Proceedings ArticleDOI

Dark current-voltage measurements on photovoltaic modules as a diagnostic or manufacturing tool

TL;DR: In this paper, the authors extend the use of dark I-V measurements to photovoltaic modules, illustrates their use in diagnosing module performance losses and proposes their use for process monitoring during manufacturing.
Journal ArticleDOI

Effects of thermomechanical cycling on lead and lead-free (SnPb and SnAgCu) surface mount solder joints

TL;DR: In this paper, the authors performed accelerated reliability tests on leadless and leaded lead-free and lead containing SMT component assemblies and found that the reliability of the lead-based solders could perform better or worse than the lead based solders, depending on board and component metallisations and use environment.
Journal ArticleDOI

Microstructure, orientation and damage evolution in SnPb, SnAgCu, and mixed solder interconnects under thermomechanical stress

TL;DR: In this article, the microstructure, orientation evolution and failure modes of SnPb, SnAgCu, and mixed (SnAgCu bump+SnPb paste) solder interconnects were studied by thermal cycling between 0.oC and 100oC (with 15min dwell times and 15min ramps).
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