Journal ArticleDOI
Gate capacitance characteristics of a poly-Si thin film transistor
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TLDR
In this paper, a capacitance voltage model that is continuous across the linear and saturation regimes is developed for a polysilicon thin film transistor, incorporating all the effects like the field dependent mobility and the channel length modulation.Abstract:
A capacitance voltage model that is continuous across the linear and saturation regimes is developed for a polysilicon thin film transistor, incorporating all the effects like the field dependent mobility and the channel length modulation. The expression developed explains the capacitance behavior in the kink region as well. Further, transconductance in saturation region is evaluated. The results obtained are then used to calculate the cut off frequency of the device in all the regions of device operation. The C–V results so obtained are matched with the available experimental results. The results are analyzed to obtain high cut off frequency by varying the grain size.read more
Citations
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Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
TL;DR: In this paper, the difference between the normal C-V and the quasi-static C−V characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is investigated with two different measurement configurations.
Journal ArticleDOI
Poly-crystalline Silicon Thin Film Transistor: a Two- dimensional Threshold Voltage Analysis using Green's Function Approach
TL;DR: A two?dimensional treatment of the potential distribution under the depletion approximation is presented for poly?crystalline silicon thin film transistors and shows good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of the model.
Journal ArticleDOI
Unified gate capacitance model of polysilicon thin-film transistors for circuit applications
TL;DR: In this paper, the characteristics of gate capacitance at polysilicon thin-film transistors (poly-Si TFTs) based on terms of surface potential have been described and modeled, and an explicit approximate relation for surface potential as a function of terminal voltages is developed.
Journal ArticleDOI
Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress
TL;DR: In this article, a metrology was proposed to realize the distribution of fixed oxide trapped charges and grain boundary trapped states in n-channel thin-film transistors, and the gate-to-drain capacitance with varying frequency of applied small signal was developed.
Journal ArticleDOI
Interface defects detection and quantification on a Si/SiO2 structure
TL;DR: In this article, the Hill-Coleman method was used to calculate the interface states density in each case and it was found that most of the defects have energies within the upper band gap of the semiconductor.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
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An analytical model for the above-threshold characteristics of polysilicon thin-film transistors
TL;DR: In this article, an analytical model for the above-threshold characteristics of long-channel, small-grain and thin channel polysilicon thin film transistors (TFT's) is presented.
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Transport properties of polycrystalline silicon films
TL;DR: In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.
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Conductivity behavior in polycrystalline semiconductor thin film transistors
TL;DR: In this article, the effect of thermal annealing on implanted and unimplanted CdSe TFTs has been studied and the model appears to give a general description of the conductivity behavior in polycrystallin...