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Journal ArticleDOI

Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

Mwj Menno Prins, +3 more
- 04 Jun 1998 - 
- Vol. 83, Iss: 2, pp 888-893
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TLDR
In this article, a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping, is presented.
Abstract
We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters (the carrier effective mass and mean free path) the model contains grain boundary parameters (barrier height and width) and a coefficient of current nonuniformity. Temperature-dependent conductivity and Hall measurements on polycrystalline SnO2 thin films with different Sb concentrations are consistently interpreted.

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Journal ArticleDOI

Bulk-quantity synthesis and self-catalytic VLS growth of SnO2 nanowires by lower-temperature evaporation

TL;DR: In this article, a self-catalytic effect in the VLS process has been described, with diameters ranging from 10 to 190 nm and lengths extending to tens of micrometers.
Journal ArticleDOI

Growth of SnO2 nanowires with uniform branched structures

TL;DR: In this paper, the morphology and microstructure of single crystalline SnO 2 nanowires and the branched wires are characterized by means of scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM), selective area electron diffraction (SAED), and Raman spectrum.
Journal ArticleDOI

SnO2 nanowhiskers and their ethanol sensing characteristics

TL;DR: In this paper, a tetragonal rutile single crystal with diameters ranging from 50 to 200 nm and lengths extending to tens of micrometres was synthesized for gas sensor fabrication.
Journal ArticleDOI

High-temperature charge transport and thermoelectric properties of a degenerately Al-doped ZnO nanocomposite

TL;DR: In this article, a ZnO nanocomposite with ZnAl2O4 nanoprecipitates by spark plasma sintering and its high-temperature charge transport and thermoelectric properties were investigated up to 1073 K.
Journal ArticleDOI

Barrier-controlled carrier transport in microcrystalline semiconducting materials: Description within a unified model

TL;DR: In this article, a unified model that unifies the ballistic and diffusive transport mechanisms is applied to the carrier transport across potential barriers at grain boundaries in microcrystalline semiconducting materials.
References
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Journal ArticleDOI

Transparent conductors—A status review

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
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Quantum Transport in Semiconductor Nanostructures

TL;DR: In this article, the authors describe the properties of Si-inversion layers in GaAs-AlGaAs Heterostructures and the Quantum Hall Effect in strong magnetic fields.
Journal ArticleDOI

SnO2 sensors: current status and future prospects☆

TL;DR: A survey on the current status and future prospects in research and development of SnO2-based sensors is given in this paper, where the influence of contact geometry and crystallinity on the sensor response signal is outlined.
Book ChapterDOI

Quantum Transport in Semiconductor Nanostructures

TL;DR: In this article, the authors present a self-contained account of the three transport regimes in semiconductor nanostructures, namely ballistic transport, diffusive transport and ballistic transport.
Journal ArticleDOI

The Hall effect in polycrystalline and powdered semiconductors

TL;DR: In this article, a critical review of idealized two-phase geometrical models is given, which derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents.
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