Highly flexible and stable resistive switching devices based on WS 2 nanosheets:poly(methylmethacrylate) nanocomposites.
TLDR
The memristive device based on an Al/WS2 NSs:PMMA/ITO device exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm.Abstract:
This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS2 nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS2 NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 104. The memristive device based on the WS2 NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 104 sec, and the number of endurance cycles was greater than 1 × 102. The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS2 NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram.read more
Citations
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Exceptional mechano-electronic properties in the HfN2 monolayer: a promising candidate in low-power flexible electronics, memory devices and photocatalysis.
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Highly Stable and Flexible Memristive Devices Based on Polyvinylpyrrolidone: WS2 Quantum Dots.
TL;DR: Tungsten disulfide (WS2) quantum dots (QDs) embedded in polyvinylpyrrolidone (PVP) based flexible Memristive devices were prepared, and those devices exhibited typical bistable electrical switching and remarkable nonvolatile memristive behaviors.
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Interface-Driven Multifunctionality in Two-Dimensional TiO2 Nanosheet/Poly(Dimercaptothiadiazole-Triazine) Hybrid Resistive Random Access Memory Device.
Anju Kumari,Shobith M Shanbogh,Iranna Udachyan,Sakthivel Kandaiah,Amit Roy,Vaibhav Varade,Anjaneyulu Ponnam +6 more
TL;DR: The impedance spectroscopy has been employed to show that the multifunctional features are directly associated to the NS/polymer interface, which deduce that the manipulation of such interfaces can pave the way for developing the hybrid structures.
References
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TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
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