Journal ArticleDOI
Investigation of Barrier-Layer Materials for Mg 2 Si/Ni Interfaces
Tatsuya Sakamoto,Yutaka Taguchi,Takeshi Kutsuwa,Kiyohide Ichimi,Kasatani Shinichi,Minoru Inada +5 more
TLDR
In this article, the barrier effect, adhesion, and contact resistance of each of these materials were evaluated, and it was shown that Mg appeared on the Ti surface and TiSi2 deposited on Mg2Si; however, no Mg was detected on the surface of TiN or in the inner part of the Ni electrode.Abstract:
The durability of Ni electrodes, which are often used for Mg2Si thermoelectric chips, is poor at high working temperatures because of deposition of Mg at the Mg2Si/Ni interface and on the surface. Hence, a “Mg2Si/barrier material/Ni” structure was adopted instead of direct adhesion of Ni to Mg2Si. Ti, TiSi2, and TiN were selected as candidate materials for the barrier layer between Mg2Si and Ni, and the barrier effect, adhesion, and contact resistance of each of these materials were evaluated. After the samples had been annealed at 873 K for 1 h, Mg appeared on the Ti surface and TiSi2 deposited on Mg2Si; however, no Mg was detected on the surface of TiN or in the inner part of the Ni electrode. Continuous, low contact resistance was also observed for Mg2Si/TiN/Ni samples. TiN does not adhere strongly to Mg2Si but is a promising barrier material for Mg2Si/Ni interfaces.read more
Citations
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Journal ArticleDOI
Realizing a thermoelectric conversion efficiency of 12% in bismuth telluride/skutterudite segmented modules through full-parameter optimization and energy-loss minimized integration
Qihao Zhang,Jincheng Liao,Tang Yunshan,Gu Ming,Chen Ming,Pengfei Qiu,Shengqiang Bai,Xun Shi,Ctirad Uher,Lidong Chen +9 more
TL;DR: In this article, a three-dimensional numerical analysis model of a segmented thermoelectric (TE) power-generating device is presented, which takes into account the temperature-dependent materials' properties and various parasitic losses.
Journal ArticleDOI
Electrode interface optimization advances conversion efficiency and stability of thermoelectric devices
Jing Chu,Jian Huang,Ruiheng Liu,Jincheng Liao,Xugui Xia,Qihao Zhang,Chao Wang,Gu Ming,Shengqiang Bai,Xun Shi,Lidong Chen +10 more
TL;DR: This simple criterion provides an effective guidance on screening barrier layer with bonding-blocking-conducting synergetic functions for thermoelectric device integration and shows niobium as a promising barrier layer.
Journal ArticleDOI
Recent progress in p-type thermoelectric magnesium silicide based solid solutions
TL;DR: In this article, the effect of doping on thermoelectric properties of magnesium silicide-based solid solutions was investigated and the interplay between the thermodynamic properties and composition, electronic band structure, and doping effect was investigated.
Journal ArticleDOI
Recent progress in magnesium-based thermoelectric materials
TL;DR: An overview of the recent developments relating to magnesium-based thermoelectric materials and review the current approaches towards high temperature efficiency can be found in this paper, where the authors present an overview of some of the most recent developments in this area.
Journal ArticleDOI
Thermoelectric performance of Li doped, p-type Mg2(Ge,Sn) and comparison with Mg2(Si,Sn)
TL;DR: In this paper, the potential of p-type Mg 2 (Ge,Sn) was investigated by optimizing Mg2 Ge 0.4 Sn 0.6 using Li as dopant.
References
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Journal ArticleDOI
Metal silicides in CMOS technology : Past, present, and future trends
Shi-Li Zhang,Mikael Östling +1 more
TL;DR: The metal silicides have played an indispensable role in the rapid development of microelectronics since PtSi was first used to improve the rectifying characteristics of diodes in early 1960s as discussed by the authors.
Journal ArticleDOI
The use of titanium-based contact barrier layers in silicon technology
C.Y. Ting,M. Wittmer +1 more
TL;DR: The use of a diffusion barrier layer in the contact structure, which prevents metallurgical reactions as well as diffusion between the silicon or silicide and the contact metal, is the most common approach to achieve stable and reliable contacts.
Journal ArticleDOI
Titanium diffusion in silicon
S. Hocine,Daniel Mathiot +1 more
TL;DR: Titanium diffusion profiles in silicon were determined in the 950-1200°C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface.
Journal ArticleDOI
Characteristics of TiN barrier layer against Cu diffusion
TL;DR: In this paper, thin films of TiN interposed between Cu and SiO2 layers have been examined as a diffusion barrier as well as an adhesion-promoting layer for Cu metallization.
Journal ArticleDOI
Fabrication and characterization of nickel contacts for magnesium silicide based thermoelectric generators
J. de Boor,C. Gloanec,Hendrik Kolb,Reinhard Sottong,Pawel Ziolkowski,Eckhard Müller,Eckhard Müller +6 more
TL;DR: In this article, the Ni contacts were applied on doped Mg2Si samples using a simple one-step sintering technique and analyzed by combining microstructural analysis with spatially resolved and temperature dependent contact resistance measurements.