Journal ArticleDOI
Low-temperature growth of graphene on iron substrate by molecular beam epitaxy
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TLDR
In this article, the authors investigated temperature-dependent growth of graphene on Fe substrate by gas-source molecular beam epitaxy and found that large-area graphene flakes can be grown on Fe at a growth temperature as low as 400°C.About:
This article is published in Thin Solid Films.The article was published on 2017-04-01. It has received 17 citations till now. The article focuses on the topics: Graphene nanoribbons & Graphene oxide paper.read more
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Cutting edge development on graphene derivatives modified by liquid crystal and CdS/TiO2 hybrid matrix: optoelectronics and biotechnological aspects
Kaushik Pal,Asiya Si,Gharieb S. El-Sayyad,M. Abd Elkodous,Rajesh Kumar,Ahmed I. El-Batal,Samo Kralj,Sabu Thomas +7 more
TL;DR: Two dimensional (2D) graphene and its derivatives modification with nanomaterials for formation of hybrid/nanocomposites undergo stimulus-induced optical and electrical changes which are important.
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Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers.
Hao Tian,Alireza Khanaki,Protik Das,Renjing Zheng,Zhenjun Cui,Yanwei He,Wenhao Shi,Zhongguang Xu,Roger K. Lake,Jianlin Liu +9 more
TL;DR: Density functional theory calculations reveal that the interstitial carbon atoms can increase the adsorption energy of B and N atoms on the Co(111) surface and decrease the diffusion activation energy and, in turn, promote the nucleation and growth of 2D h-BN.
Journal ArticleDOI
Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures
Alireza Khanaki,Hao Tian,Zhongguang Xu,Renjing Zheng,Yanwei He,Zhenjun Cui,Jingchuan Yang,Jianlin Liu +7 more
TL;DR: A systematic study of hexagonal boron nitride/graphene (h-BN/G) heterostructure growth by introducing high incorporation of a carbon (C) source on a heated cobalt (Co) foil substrate followed byboron and nitrogen sources in a molecular beam epitaxy system finds that in all three h-BN / G heterostructures growth regions, a 3 h h-bn growth at 900 °C led to h-PN film with a thickness
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A Controlled Carburization Process to Obtain Graphene–Fe3C–Fe Composites
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Self-assembled Cubic Boron Nitride Nanodots.
TL;DR: It is found that the nucleation, formation, and morphological properties of c-BN NDs can be closely correlated with the nature of substrate including catalysis effect, lattice-mismatch-induced strain, and roughness, and growth conditions, in particular, growth time and growth temperature.
References
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Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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Large-scale pattern growth of graphene films for stretchable transparent electrodes
Keun Soo Kim,Yue Zhao,Houk Jang,Sang Yoon Lee,Jong Min Kim,Kwang S. Kim,Jong Hyun Ahn,Philip Kim,Philip Kim,Jae-Young Choi,Byung Hee Hong +10 more
TL;DR: The direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers is reported, and two different methods of patterning the films and transferring them to arbitrary substrates are presented, implying that the quality of graphene grown by chemical vapours is as high as mechanically cleaved graphene.
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Analysis of XPS spectra of Fe2+ and Fe3+ ions in oxide materials
Toru Yamashita,Peter C. Hayes +1 more
TL;DR: In this paper, the peak positions and peak shape parameters of Fe 3p for Fe2+ and Fe3+ were derived from the XPS spectra of the standard samples of 2FeO·SiO2 and Fe2O3, respectively.
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Structural defects in graphene
TL;DR: In this article, the present knowledge about point and line defects in graphene are reviewed and particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications.
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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Konstantin V. Emtsev,Aaron Bostwick,Karsten Horn,Johannes Jobst,Gary Lee Kellogg,Lothar Ley,J. L. McChesney,Taisuke Ohta,Sergey A. Reshanov,Jonas Röhrl,Eli Rotenberg,Andreas K. Schmid,Daniel Waldmann,Heiko B. Weber,Thomas Seyller +14 more
TL;DR: The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis and produces monolayer graphene films with much larger domain sizes than previously attainable.