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Journal ArticleDOI

Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

TLDR
This work demonstrates an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors, comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.
Abstract
Intrinsic nonuniformity in the polycrystalline-silicon backplane transistors of active matrix organic light-emitting diode displays severely limits display size. Organic semiconductors might provide an alternative, but their mobility remains too low to be useful in the conventional thin-film transistor design. Here we demonstrate an organic channel light-emitting transistor operating at low voltage, with low power dissipation, and high aperture ratio, in the three primary colors. The high level of performance is enabled by a single-wall carbon nanotube network source electrode that permits integration of the drive transistor and the light emitter into an efficient single stacked device. The performance demonstrated is comparable to that of polycrystalline-silicon backplane transistor-driven display pixels.

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Journal ArticleDOI

Carbon Nanotubes: Present and Future Commercial Applications

TL;DR: Although not yet providing compelling mechanical strength or electrical or thermal conductivities for many applications, CNT yarns and sheets already have promising performance for applications including supercapacitors, actuators, and lightweight electromagnetic shields.
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25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

TL;DR: In this paper, the state-of-the-art in organic field effect transistors (OFETs) are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays.
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Thermally Activated Delayed Fluorescence Materials Towards the Breakthrough of Organoelectronics

TL;DR: An overview of the quick development in TADF mechanisms, materials, and applications is presented, with a particular emphasis on their different types of metal-organic complexes, D-A molecules, and fullerenes.
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Recent progress in metal–organic complexes for optoelectronic applications

TL;DR: An overview of recent development in metal-organic complexes with controlled molecular structures and tunable properties is presented, including advances in extending the control of molecular structures to solid materials for energy conversion and information technology applications.
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Thienoacene‐Based Organic Semiconductors

TL;DR: This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class, and provides insight into new molecular design strategies for the development of superior organic semiconductors.
References
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Journal ArticleDOI

Transparent, Conductive Carbon Nanotube Films

TL;DR: Characteristics of the fabrication of ultrathin, transparent, optically homogeneous, electrically conducting films of pure single-walled carbon nanotubes indicate broad applicability of the films for electrical coupling in photonic devices.
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General observation of n-type field-effect behaviour in organic semiconductors

TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
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Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors

TL;DR: In this article, a facile three-step synthetic procedure for highly π-extended heteroarenes, dinaphtho[2,3-b:2‘,3‘-f]thieno[3,2-b]thiophene (DNTT), and DNSS, was established, and the highest field effect mobility of DNTT-and DNSS-based OFETs is 2.9 and 1.9 cm2 V-1 s-1, respectively.
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The physics of amorphous-silicon thin-film transistors

TL;DR: In this paper, the basic physics underlying the operation and key performance issues of amorphous-silicon thin-film transistors are discussed, and the transistors also show longer time threshold voltage shifts due to two distinct mechanisms: charge trapping in the silicon nitride gate insulator and metastable dangling bond state creation.
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Metal oxides as a hole-injecting layer for an organic electroluminescent device

TL;DR: In this article, a hole-injecting layer for an organic electroluminescent (EL) device consisting of N,N'-diphenyl-N,N-bis(3-methylphenyl1)1,1'-biphensyl-4,4' diamine (TPD) and tris-(8-quinolinolato) aluminium (Alq) was presented.
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