Journal ArticleDOI
Modeling and simulation of hot-carrier-induced device degradation in MOS circuits
Yusuf Leblebici,Sung-Mo Kang +1 more
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TLDR
In this article, an integrated simulation tool is presented for estimating the hot-carrier-induced degradation of nMOS transistor characteristics and circuit performance and a reliability simulation tool incorporates an accurate one-dimensional MOSFET model for representing the electrical behavior of locally damaged transistors.Abstract:
The physical models and an integrated simulation tool are presented for estimating the hot-carrier-induced degradation of nMOS transistor characteristics and circuit performance. The proposed reliability simulation tool incorporates an accurate one-dimensional MOSFET model for representing the electrical behavior of locally damaged transistors. The hot-carrier-induced oxide damage can be specified by only a few parameters, avoiding extensive parameter extractions for the characterization of device damage. The physical degradation model includes both fundamental device degradation mechanisms, i.e., charge trapping and interface trap generation. A repetitive simulation scheme has been adopted to ensure accurate prediction of the circuit-level degradation process under dynamic operating conditions. >read more
Citations
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Journal ArticleDOI
Statistical inference of a time-to-failure distribution derived from linear degradation
Jye-Chyi Lu,Jinho Park,Qing Yang +2 more
TL;DR: In this article, a model with random regression coefficients and a standard deviation function was proposed for analyzing linear degradation data, and the model parameters, the cdf, and its quantiles were estimated by the maximum likelihood (ML) method and constructed confidence intervals from the bootstrap, from the asymptotic normal approximation, and from inverting likelihood ratio tests.
Journal ArticleDOI
Electronic circuit reliability modeling
TL;DR: The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are reviewed and a new approach for accurately predicting circuit reliability and failure rate from the system point of view is proposed.
Journal ArticleDOI
Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation
TL;DR: In this paper, the most important intrinsic wearout mechanisms of MOSFETs (including hot-carrier injection, time-dependent dielectric breakdown, and negative bias temperature instability) are reviewed and a new SPICE reliability simulation approach is proposed and demonstrated with a simplified SRAM design on a commercial 90nm technology.
Journal ArticleDOI
Electrostatic discharge in semiconductor devices: an overview
J.E. Vinson,Juin J. Liou +1 more
TL;DR: In this article, the impact of ESD on the IC industry and details the four stages of an ESD event: (1) charge generation, (2) charge transfer, (3) device response and (4) device failure.
Proceedings ArticleDOI
Emerging yield and reliability challenges in nanometer CMOS technologies
Georges Gielen,P. De Wit,Elie Maricau,Johan Loeckx,Javier Martin-Martinez,Ben Kaczer,Guido Groeseneken,Rosana Rodriguez,Montserrat Nafria +8 more
TL;DR: For each effect, the basic physical mechanisms causing the effect and its impact on transistor parameters are described and possible solutions to cope with these effects on the design level are discussed.
References
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Journal ArticleDOI
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
TL;DR: In this paper, a physical model involving the breaking of the ≡ Si s H bonds was proposed to explain the observed time dependence of MOSFET degradation and the observed channel field.
Journal ArticleDOI
An empirical model for device degradation due to hot-carrier injection
E. Takeda,N. Suzuki +1 more
TL;DR: In this article, an empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented, and the relationship between device degradation, drain voltage, and substrate current is clarified on the basis of experiments and modeling.
Journal ArticleDOI
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
TL;DR: In this article, the degradation behavior of n-channel transistors under alternating injection conditions is discussed and fully explained based on the static stress degradation model for both channel types using the charge-pumping technique.
Journal ArticleDOI
Lucky-electron model of channel hot-electron injection in MOSFET'S
Simon M. Tam,P.K. Ko,Chenming Hu +2 more
TL;DR: In this paper, the authors apply the lucky-electron concept to the modeling of channel hot electron injection in n-channel MOSFET's, although the result can be interpreted in terms of electron temperature as well.
Journal ArticleDOI
Hot-electron and hole-emission effects in short n-channel MOSFET's
TL;DR: In this paper, a comparison of hot-carrier degradation experiments with simulations of hot electron and hole emission into the oxide was made, and it was shown that both the emission of holes and of electrons are essential to explain the dominant generation of negative charge by a new degradation mechanism.
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