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Multifunctional Ti1−xTaxO2: Ta doping or alloying?

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TLDR
In this article, phase formation for films of Ti1−xTaxO2 prepared by pulsed laser deposition was studied and it was shown that substitutional Ta in TiO2 results in a different material system in terms of its electronic properties.
Abstract
Useful electronic, magnetic, and optical properties have been proposed and observed in thin films of Ti1−xMxO2 (M=Ta,Nb,V). In this work, we have studied phase formation for films of Ti1−xTaxO2 prepared by pulsed laser deposition. We show that substitutional Ta in TiO2 results in a different material system in terms of its electronic properties. Moss–Burstein shift is ruled out by comparing the electrical transport data of anatase and rutile TiO2. Vegard’s law fit to the blueshift data and the high energy optical reflectivity studies confirm the formation of an alloy with a distinct band structure.

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Doping and alloying for improved perovskite solar cells

TL;DR: In this article, a brief review of doping and alloying approaches used to enhance the efficacy of the hybrid organic-inorganic perovskite (HOIP) layer, the electron-transport layer (ETL), the hole-transporting layer (HTL), and the electrode layers in PSCs is presented.
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The Emergence of the Mixed Perovskites and Their Applications as Solar Cells

TL;DR: In this paper, the authors highlight the recent advances in developing mixed halide perovskite (PVSK) materials and their relevant optoelectronic properties, focusing on mixed PVSK materials in the form of polycrystalline thin films, but also discuss nanostructured and two-dimensional (2D) PVSK material due to the increasing interest of broad readership.
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Electrochemical CO2 reduction (CO2RR) to multi-carbon products over copper-based catalysts

TL;DR: In this article , the authors review the recent advances to improve the activity and selectivity of CO2 reduction to multi-carbon (C2+) products over Cu-based nanomaterials.
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Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting

TL;DR: The first example of tantalum nitride electrodes on transparent conductive oxide substrates, which enables solar water splitting, is presented.
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Electronic structures and formation energies of pentavalent-ion-doped SnO2: First-principles hybrid functional calculations

TL;DR: In this paper, the electronic properties and relative thermodynamic stability of several pentavalent-ion (Ta, Nb, P, Sb, and I) doped SnO2 systems using first-principles hybrid density functional theory calculations were evaluated.
References
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Journal ArticleDOI

Room temperature deposition of a TiO2 thin film from aqueous peroxotitanate solution

TL;DR: A transparent, high purity, amorphous titanium dioxide thin film composed of densely packed nanometer-sized grains has been successfully deposited on a glass substrate at room temperature from an aqueous peroxotitanate solution using a simple, inexpensive, reproducible, and environmentally friendly method as discussed by the authors.
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Band-gap energies of sol-gel-derived SrTiO3 thin films

TL;DR: In this paper, the band-gap energies of sol-gel-derived SrTiO3 thin films were studied in terms of annealing temperature and film thickness, and it was shown that the band gap energy shift was mainly due to both quantum size effect and existence of amorphous phase in thin films.
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Atomic control of conductivity versus ferromagnetism in wide-gap oxides via selective doping: V, Nb, Ta in anatase TiO2.

TL;DR: These behaviors for column V-B dopants in anatase TiO2 are quantified by combining electronic structure calculations, thermodynamic simulations, and percolation theory to identify two general types of electronic behaviors for transition-metal impurities.
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Ta-doped Anatase TiO2 Epitaxial Film as Transparent Conducting Oxide

TL;DR: In this paper, electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method are presented.
Journal ArticleDOI

Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law

TL;DR: The N content and lattice parameter of GaNxAs1−xepilayers on GaAs were determined by secondary ion mass spectroscopy and x-ray diffraction measurements, respectively as discussed by the authors.
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