Nanoscale characterization of semiconductor materials and devices using scanning probe techniques

TLDR: In this article, the fundamental principles of scanning tunneling microscopy, atomic force microscopy and other scanning probe techniques are described, with particular emphasis on the elucidation of epitaxial growth mechanisms, and on the atomic-scale characterization of interface and alloy layer structure in III-V heterostructures by crosssectional techniques.

Abstract: Scanning probe techniques are applied to a rapidly growing degree in the characterization of advanced semiconductor materials and device structures. In this review, the fundamental principles of scanning tunneling microscopy, atomic force microscopy, and other scanning probe techniques are described. The application of these techniques to the characterization of III–V and Group IV semiconductor epitaxial growth and epitaxial layer structure is discussed, with particular emphasis on the elucidation of epitaxial growth mechanisms, and on the atomic-scale characterization of interface and alloy layer structure in III–V heterostructures by crosssectional techniques. Nanoscale characterization of buried metal-semiconductor and semiconductor-semiconductor interfaces using ballistic electron emission microscopy is also addressed. Finally, a detailed discussion is included concerning the use of scanning probe techniques for nanometer-scale characterization of ultrasubmicron Si electronic devices — a problem of central importance in ultralarge-scale integrated circuit technology for the coming decade and beyond. Throughout the review, emphasis is placed on the role of scanning probe microscopy in relation to other semiconductor characterization techniques, the influence of various atomic- to nanometer-scale material properties on semiconductor device behavior, and the importance in many instances of theoretical modeling and simulation in the interpretation of results obtained using scanning probe techniques.