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Journal ArticleDOI

Nanotaper for compact mode conversion.

Vilson R. Almeida, +2 more
- 01 Aug 2003 - 
- Vol. 28, Iss: 15, pp 1302-1304
TLDR
It is shown that the micrometer-long silicon-on-insulator-based nanotaper coupler is able to efficiently convert both the mode field profile and the effective index, with a total length as short as 40 microm, during compact mode conversion between a fiber and a submicrometer waveguide.
Abstract
We propose and demonstrate an efficient coupler for compact mode conversion between a fiber and a submicrometer waveguide. The coupler is composed of high-index-contrast materials and is based on a short taper with a nanometer-sized tip. We show that the micrometer-long silicon-on-insulator-based nanotaper coupler is able to efficiently convert both the mode field profile and the effective index, with a total length as short as 40 microm. We measure an enhancement of the coupling efficiency between an optical fiber and a waveguide by 1 order of magnitude due to the coupler.

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Citations
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Micrometre-scale silicon electro-optic modulator

TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
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Device Requirements for Optical Interconnects to Silicon Chips

TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
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Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
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All-optical control of light on a silicon chip

TL;DR: The experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index and confirm the recent theoretical prediction of efficient optical switching in silicon using resonant structures.
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Silicon photonics

TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
References
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Journal ArticleDOI

Photonic-bandgap microcavities in optical waveguides

TL;DR: In this paper, the authors measured microcavity resonances in two-and three-dimensional photonic-bandgap (PBG) structures integrated directly into a sub-micrometre-scale silicon waveguide.
Journal ArticleDOI

A review on fabrication technologies for the monolithic integration of tapers with III-V semiconductor devices

TL;DR: An overview of different taper designs, the possible fabrication technologies and performances of tapered devices can be found in this article, where the authors also give an overview of various taper configurations.

The Institute of Electrical and Electronics Engineers

TL;DR: The US government should establish a review board to oversee the time schedule of each incremental step of Automated Highway Systems (AHS), which would be used on dedicated lanes, but mixed automated/manual traffic is seen as a possible stepping stone.
Journal ArticleDOI

Design of a single-mode tapered waveguide for low-loss chip-to-fiber coupling

TL;DR: In this article, the authors proposed a nonlinearly tapered waveguide with a non-Gaussian shape and an expanded mode field with a very small cross-section and a nonlinear shape.
Journal ArticleDOI

Propagation Characteristics of Ultrahigh-Δ Optical Waveguide on Silicon-on-Insulator Substrate

TL;DR: In this article, a submicron rectangular waveguide with a relative refractive index difference Δ of 45% was fabricated on a silicon-on-insulator substrate, and its propagation characteristics were evaluated using the Fabry-Perot resonance method.
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