Observation of Planar Hall Effect in Topological Insulator -- Bi$_2$Te$_3$
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In this article, the authors demonstrate an enhancement in PHE amplitude by doubling the thickness of Bi$_2$Te$_3$ film on Si (111) and showed that the amplitude increases with temperature.Abstract:
Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance in TIs, our present study reflects the need for considering the bulk conduction in understanding PHE in TIs. Here, we demonstrate an enhancement in PHE amplitude by three times by doubling the thickness of Bi$_2$Te$_3$ film on Si (111). The PHE amplitude reaches $\approx$~6 n$\Omega$m in 30 quintuple layer (QL) device as compared to $\approx$~2 n$\Omega$m in 14 QL. We find that the PHE amplitude increases with temperature in the 30 QL Bi$_2$Te$_3$ films grown on Si (111) and Al$_2$O$_3$ (0001). Our experiments indicate that the contribution of bulk states to PHE in TIs could be significant.read more
Citations
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References
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Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Zhaoquan Zeng,Timothy Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming Wang,Jian Wang,Shui-Qing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo +13 more
TL;DR: In this article, high quality Bi2Te3 and Sb2Te 3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy.
Journal ArticleDOI
Bulk band structure of Bi 2 Te 3
Matteo Michiardi,Irene Aguilera,Marco Bianchi,Vágner E. Carvalho,Luiz Orlando Ladeira,Nayara Gomes Teixeira,Edmar A. Soares,Chiristoph Friedrich,Stefan Blügel,Philip Hofmann +9 more
TL;DR: In this paper, the bulk band structure of a family of topological insulators was determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations.
Journal ArticleDOI
Direct Measurement of Surface Transport on a Bulk Topological Insulator
Lucas Barreto,Lisa Kühnemund,Frederik Edler,Christoph Tegenkamp,Jianli Mi,Martin Bremholm,Bo B. Iversen,Christian Frydendahl,Marco Bianchi,Philip Hofmann +9 more
TL;DR: In this article, the authors present the first direct measurement of surface-dominated conduction on an atomically clean surface of bulk-insulating Bi2Te2Se, using nano-scale four point setups with variable contact distance, and by combining these measurements with angle-resolved photoemission results from the same crystals, they show that the transport at 30 K is two-dimensional rather than threedimensional.
Journal ArticleDOI
Berry phase theory of planar Hall effect in topological insulators.
TL;DR: This paper presents a quasi-classical theory of another intriguing phenomenon in topological insulators – also ascribed to chiral anomaly in Weyl and Dirac semimetals– the so-called planar Hall effect (PHE).
Journal ArticleDOI
Angular dependence of the topological Hall effect in the uniaxial van der Waals ferromagnet Fe 3 GeTe 2
Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang +10 more
TL;DR: In this article, the angular dependence of electrical transport properties in single crystals was studied and uncovered an unexpected topological Hall effect (THE) in the configuration of large tilted magnetic fields, which is a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy.
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