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Journal ArticleDOI

Operating limits of Al-alloyed high-low junctions for BSF solar cells

J. del Alamo, +2 more
- 01 May 1981 - 
- Vol. 24, Iss: 5, pp 415-420
TLDR
In this article, the effective surface recombination velocity of the high-low junction (Seff) and of the base diffusion length are carried out for Al-alloyed n+pp+ bifacial cells and the results are presented in form of histograms.
Abstract
Experimental estimations of the effective surface recombination velocity of the high-low junction (Seff) and of the base diffusion length are carried out for Al-alloyed n+pp+ bifacial cells and the results are presented in form of histograms. These results agree with calculated values of Seff when the characteristics of the recrystallized Si layer and heavy doping effects are taken into account. It is concluded that thick Al layers and high alloying temperatures (over 800°C) are necessary to obtain low values of Seff. This conclusion agrees with experimental results of other authors. Recomendations to avoid diffusion length degradation are given and the operating limits of the Al alloying technology are discussed.

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Citations
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Loss analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements

TL;DR: In this article, the authors reduced the three-dimensional transport in solar cells with periodically arranged rear point contacts to a one-dimensional calculation and derived an approximation for the series resistance.
Journal ArticleDOI

Low-cost industrial technologies of crystalline silicon solar cells

TL;DR: In this paper, the authors focused on crystalline silicon solar cells and proposed several high-efficiency features to improve the efficiency and decrease the price of the commercial PV modules, and showed that increasing the PV market size toward 500 MWp/y and accounting for realistic industrial improvements can lead to a drastic PV module price reduction to $1/Wp.
Journal ArticleDOI

The physics and modeling of heavily doped emitters

TL;DR: In this article, the physics of minority-carrier injection and internal quantum efficiency of heavily doped emitters were studied through a novel computer simulation, and it was shown that in the shallow emitters of modern devices, the transport of carriers through the bulk of the emitter, and the surface recombination rate are the dominant mechanisms controlling the minority carrier profile.
Proceedings ArticleDOI

A freeware 1D emitter model for silicon solar cells

TL;DR: In this article, the authors present a freeware computer program that models a 1D emitter in silicon, given a user-defined dopant profile, a surface recombination velocity, and an incident spectrum.
Journal ArticleDOI

Evolution of metal plating for silicon solar cell metallisation

TL;DR: In this paper, the authors report on the evolution of metal plating techniques, from their use in early silicon solar cells, to current light-induced plating processes, and review relevant recently-developed dielectric patterning methods.
References
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Journal ArticleDOI

Solid solubilities of impurity elements in germanium and silicon

TL;DR: In this paper, the available data on solid solubilities of impurity elements in germanium and silicon are summarized in the form of solidus or solvus curves.
Journal ArticleDOI

Measurements of bandgap narrowing in Si bipolar transistors

TL;DR: In this paper, the authors used optical absorption measurements on uniformly doped silicon samples to determine the bandgap in silicon and used the bipolar transistor itself as the vehicle for measuring the band gap in the base.
Journal ArticleDOI

Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers

TL;DR: In this paper, the steady-state surface photovoltage (SPV) method of measuring minority carrier diffusion length (L ) has been extended to the case of an epitaxial layer on a thick substrate.
Journal ArticleDOI

Influence of bandgap narrowing on the performance of silicon n-p solar cells☆

TL;DR: In this article, the incorporation of bandgap narrowing in the modelling of n+p solar cells is discussed and a detailed comparison between measured and computed results of Isc, Voc and Pmax is presented.
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