Journal ArticleDOI
Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
TLDR
In this paper, the origins of conductivity and low-frequency noise in GaN p-n junctions under reverse bias were investigated and carrier hopping through defect states in the space charge region was identified as the main mechanism responsible for low bias conductivity.Abstract:
We study the origins of conductivity and low-frequency noise in GaN p-n junctions under reverse bias. Carrier hopping through defect states in the space charge region is identified as the main mechanism responsible for low bias conductivity. Threading dislocations appear the most likely source of such defect states. At higher bias hopping is supplemented with Poole–Frenkel emission. A relatively high level of 1/f-like noise is observed in the diode current. The bias and temperature dependencies of the noise current are investigated.read more
Citations
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III-Nitride UV Devices
TL;DR: The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III-nitride material system as mentioned in this paper, which enabled rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm.
Journal ArticleDOI
Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
TL;DR: In this paper, the reverse leakage current of a GaInN light-emitting diode (LED) was analyzed by temperature dependent current-voltage measurements, and the leakage current was attributed to variable-range-hopping conduction.
Journal ArticleDOI
Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
TL;DR: In this paper, the fabrication and characterization of n-Al0.44Ga0.56N/p-GaN ultraviolet solar-blind photodetectors were reported.
Journal ArticleDOI
Effect of threading defects on InGaN∕GaN multiple quantum well light emitting diodes
TL;DR: In this article, the threading defect density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs.
Journal ArticleDOI
Light based underwater wireless communications
Hassan M. Oubei,Chao Shen,Abla Kammoun,Emna Zedini,Ki-Hong Park,Xiaobin Sun,Guangyu Liu,Chun Hong Kang,Tien Khee Ng,Mohamed-Slim Alouini,Boon S. Ooi +10 more
TL;DR: This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, as well as KAUST-KFUPM Special Initiative (KKI) Program, REP/1/2878-01-01.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
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Semiconductor ultraviolet detectors
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Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
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Conduction in thin dielectric films
TL;DR: Conduction through thin dielectric films sandwiched between metal and semiconductor electrodes is reviewed in this article, where the authors show that the dielectrics can be used to conduct the circuit.
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Hopping conduction in amorphous solids
TL;DR: In this article, the authors examined the hopping conduction process under conditions of high temperatures, high fields and a non-uniform distribution of hopping sites and showed that the field dependence of the Mott T −¼ law can yield information about the trap density distribution.