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Polarization management for silicon photonic integrated circuits

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TLDR
Polarization management is very important for photonic integrated circuits (PICs) and their applications as mentioned in this paper, however, due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverseelectrical (TE) and transverse-magnetic (TM) modes are generally different.
Abstract
Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse-electrical (TE) and transverse-magnetic (TM) modes are generally different. Polarization-dependent dispersion and polarization-dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon-on-insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.

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Journal ArticleDOI

Direct-binary-search-optimized compact silicon-based polarization beam splitter using a pixelated directional coupler

TL;DR: In this article, a beam splitter using a pixelated directional coupler is proposed, designed, and experimentally demonstrated on silicon-on-insulator platform, and the measured polarization extinction ratio is greater than 14.22 dB and the corresponding insertion loss is smaller than 1.36 dB within a bandwidth from 1527 to 1580 nm for the fabricated device operating in transverse-electric polarization, while the measured polarisation extinction ratio and insertion loss are respectively larger than 14.,47 dB and lower than 0.53 dB from 15 27 to 15 80 µm.
Journal ArticleDOI

A compact polarization converter for silicon-based slot waveguides using a hybrid plasmonic effect

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DissertationDOI

Photonic Integrated Circuits Challenges & Solutions: Homogenization, Polarization Management and Coupling

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Polymer Components for Photonic Integrated Circuits

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References
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Journal ArticleDOI

The Past, Present, and Future of Silicon Photonics

TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Journal ArticleDOI

Guiding and confining light in void nanostructure.

TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
Journal ArticleDOI

Recent progress in lasers on silicon

TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
Journal ArticleDOI

Losses in single-mode silicon-on-insulator strip waveguides and bends.

TL;DR: The fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers with record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits.
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